Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation
- SIFCOM, UMR 6176 CNRS ENSICAEN, 6 Boulevard du Marechal Juin, 14050 Caen (France)
The crystallographic nature of the damage created in GaN by 300 keV rare earth ions has been investigated following implantation at room temperature by varying the fluence of Er, Eu, or Tm from 7x10{sup 13} to 2x10{sup 16} at./cm{sup 2}. There is a build up of point defects clusters, which increases in density and depth versus the ion fluence. When a threshold around 3x10{sup 15} at./cm{sup 2} is reached, a nanocrystalline surface layer is observed. From the lowest fluence, we point out the formation of basal stacking faults, with a majority of I{sub 1}. Their density also increases with the fluence, but it is seen to saturate at the onset of the observation of the surface nanocrystalline layer. Extrinsic E faults bounded by the c/2 partials have also been identified; however, most of the E stacking faults transform to I{sub 1} which are noticed to fold easily from basal to prismatic planes by switching or not to the Drum atomic configuration.
- OSTI ID:
- 20884756
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 7; Other Information: DOI: 10.1063/1.2357845; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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