Strain fields around high-energy ion tracks in {alpha}-quartz
- Radiation-Solid Interactions and Processing Department 1111, Sandia National Laboratories, P.O. Box 5800, MS 1056, Albuquerque, New Mexico 87185-1056 (United States)
Transmission electron microscopy has been used to image the tracks of high-energy {sup 197}Au{sup +26} (374 MeV) and {sup 127}I{sup +18} (241 MeV) ions incident in a nonchanneling direction through a prethinned specimen of hexagonal {alpha}-quartz (SiO{sub 2}). These ions have high electronic stopping powers in quartz, 24 and 19 keV/nm, respectively, which are sufficient to produce a disordered latent track. When the tracks are imaged with diffraction contrast using several different reciprocal lattice vectors, they exhibit a radial strain extending outward from their disordered centerline approximately 16 nm into the crystalline surroundings. The images are consistent with a radial strain field with cylindrical symmetry around the amorphous track, like that found in models developed to account for the lateral expansion of amorphous SiO{sub 2} films produced by irradiation with high-energy ions. These findings provide an experimental basis for increased confidence in such modeling.
- OSTI ID:
- 20884742
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 6; Other Information: DOI: 10.1063/1.2345029; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Track formation in SiO[sub 2] quartz and the thermal-spike mechanism
High-energy ion tracks in thin films.
Related Subjects
GENERAL PHYSICS
CYLINDRICAL CONFIGURATION
DIFFRACTION
ENERGY LOSSES
GOLD 197 BEAMS
GOLD IONS
IODINE 127 BEAMS
IODINE IONS
IRRADIATION
MEV RANGE 100-1000
MULTICHARGED IONS
PARTICLE TRACKS
QUARTZ
SILICON OXIDES
SIMULATION
STOPPING POWER
SYMMETRY
TRANSMISSION ELECTRON MICROSCOPY