Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy
Journal Article
·
· Journal of Applied Physics
- Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China)
Self-assembled GaAs nanostructures in In{sub 0.53}Ga{sub 0.47}As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different deposition thicknesses. The XTEM images clearly showed composition modulation in the overgrown InGaAs matrix. The reason for this composition modulation is explained by strain field compensation and surface energy minimization.
- OSTI ID:
- 20884708
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 5; Other Information: DOI: 10.1063/1.2345031; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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