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Title: Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

Abstract

The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous AlO{sub x} served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1 V and an on/off ratio of {approx}10{sup 6} operated as a n-type enhancement mode with saturation mobility of 0.53 cm{sup 2}/V s. The devices showed optical transmittance about 80% in the visible range.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. Department of Inorganic Materials Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
20883268
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 2; Other Information: DOI: 10.1063/1.2430917; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; CARRIER MOBILITY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; INDIUM COMPOUNDS; LAYERS; OPACITY; OXYGEN; PARTIAL PRESSURE; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSISTORS; ZINC OXIDES

Citation Formats

Song, Ju-Il, Park, Jae-Soung, Kim, Howoon, Heo, Young-Woo, Lee, Joon-Hyung, Kim, Jeong-Joo, Kim, G. M., Choi, Byeong Dae, School of Mechanical Engineering, Kyungpook National University, Daegu 702-701, and Display and Nano Devices Laboratory, Daegu Gyeongbuk Institute of Science and Technology, Daegu 704-230. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature. United States: N. p., 2007. Web. doi:10.1063/1.2430917.
Song, Ju-Il, Park, Jae-Soung, Kim, Howoon, Heo, Young-Woo, Lee, Joon-Hyung, Kim, Jeong-Joo, Kim, G. M., Choi, Byeong Dae, School of Mechanical Engineering, Kyungpook National University, Daegu 702-701, & Display and Nano Devices Laboratory, Daegu Gyeongbuk Institute of Science and Technology, Daegu 704-230. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature. United States. doi:10.1063/1.2430917.
Song, Ju-Il, Park, Jae-Soung, Kim, Howoon, Heo, Young-Woo, Lee, Joon-Hyung, Kim, Jeong-Joo, Kim, G. M., Choi, Byeong Dae, School of Mechanical Engineering, Kyungpook National University, Daegu 702-701, and Display and Nano Devices Laboratory, Daegu Gyeongbuk Institute of Science and Technology, Daegu 704-230. Mon . "Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature". United States. doi:10.1063/1.2430917.
@article{osti_20883268,
title = {Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature},
author = {Song, Ju-Il and Park, Jae-Soung and Kim, Howoon and Heo, Young-Woo and Lee, Joon-Hyung and Kim, Jeong-Joo and Kim, G. M. and Choi, Byeong Dae and School of Mechanical Engineering, Kyungpook National University, Daegu 702-701 and Display and Nano Devices Laboratory, Daegu Gyeongbuk Institute of Science and Technology, Daegu 704-230},
abstractNote = {The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous AlO{sub x} served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1 V and an on/off ratio of {approx}10{sup 6} operated as a n-type enhancement mode with saturation mobility of 0.53 cm{sup 2}/V s. The devices showed optical transmittance about 80% in the visible range.},
doi = {10.1063/1.2430917},
journal = {Applied Physics Letters},
number = 2,
volume = 90,
place = {United States},
year = {Mon Jan 08 00:00:00 EST 2007},
month = {Mon Jan 08 00:00:00 EST 2007}
}