High thermally stable Ni/Ag(Al) alloy contacts on p-GaN

Journal Article · Mon Jan 08 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2431577· OSTI ID:20883267

Chou, C H; Lin, C L; Chuang, Y C; Bor, H Y; Liu, C Y ^[1]

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1. Department of Chemical and Materials Engineering, National Central University, Jhong-Li, 32001, Taiwan (China)

Ag agglomeration was found to occur at Ni/Ag to p-GaN contacts after annealing at 500 degree sign C. This Ag agglomeration led to the poor thermal stability showed by the Ni/Ag contacts in relation to the reflectivity and electrical properties. However, after alloying with 10 at. % Al by e-gun deposition, the Ni/Ag(Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.

• OSTI ID: 20883267
• Journal Information: Applied Physics Letters, Vol. 90, Issue 2; Other Information: DOI: 10.1063/1.2431577; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AGGLOMERATION
ALUMINIUM ALLOYS
ANNEALING
DEPOSITION
ELECTRICAL PROPERTIES
GALLIUM NITRIDES
INTERFACES
LAYERS
NICKEL ALLOYS
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SILVER ALLOYS
STABILITY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
X-RAY PHOTOELECTRON SPECTROSCOPY