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Title: High thermally stable Ni/Ag(Al) alloy contacts on p-GaN

Abstract

Ag agglomeration was found to occur at Ni/Ag to p-GaN contacts after annealing at 500 degree sign C. This Ag agglomeration led to the poor thermal stability showed by the Ni/Ag contacts in relation to the reflectivity and electrical properties. However, after alloying with 10 at. % Al by e-gun deposition, the Ni/Ag(Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.

Authors:
; ; ; ;  [1]
  1. Department of Chemical and Materials Engineering, National Central University, Jhong-Li, 32001, Taiwan (China)
Publication Date:
OSTI Identifier:
20883267
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 90; Journal Issue: 2; Other Information: DOI: 10.1063/1.2431577; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AGGLOMERATION; ALUMINIUM ALLOYS; ANNEALING; DEPOSITION; ELECTRICAL PROPERTIES; GALLIUM NITRIDES; INTERFACES; LAYERS; NICKEL ALLOYS; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SILVER ALLOYS; STABILITY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Chou, C H, Lin, C L, Chuang, Y C, Bor, H Y, Liu, C Y, Materials and Electro-Optical Research Division, Chung Shan Institute of Science and Technology, Longtan, 32546, and Institute of Materials Science and Engineering, National Central University, Jhong-Li, 32001, Taiwan. High thermally stable Ni/Ag(Al) alloy contacts on p-GaN. United States: N. p., 2007. Web. doi:10.1063/1.2431577.
Chou, C H, Lin, C L, Chuang, Y C, Bor, H Y, Liu, C Y, Materials and Electro-Optical Research Division, Chung Shan Institute of Science and Technology, Longtan, 32546, & Institute of Materials Science and Engineering, National Central University, Jhong-Li, 32001, Taiwan. High thermally stable Ni/Ag(Al) alloy contacts on p-GaN. United States. doi:10.1063/1.2431577.
Chou, C H, Lin, C L, Chuang, Y C, Bor, H Y, Liu, C Y, Materials and Electro-Optical Research Division, Chung Shan Institute of Science and Technology, Longtan, 32546, and Institute of Materials Science and Engineering, National Central University, Jhong-Li, 32001, Taiwan. Mon . "High thermally stable Ni/Ag(Al) alloy contacts on p-GaN". United States. doi:10.1063/1.2431577.
@article{osti_20883267,
title = {High thermally stable Ni/Ag(Al) alloy contacts on p-GaN},
author = {Chou, C H and Lin, C L and Chuang, Y C and Bor, H Y and Liu, C Y and Materials and Electro-Optical Research Division, Chung Shan Institute of Science and Technology, Longtan, 32546 and Institute of Materials Science and Engineering, National Central University, Jhong-Li, 32001, Taiwan},
abstractNote = {Ag agglomeration was found to occur at Ni/Ag to p-GaN contacts after annealing at 500 degree sign C. This Ag agglomeration led to the poor thermal stability showed by the Ni/Ag contacts in relation to the reflectivity and electrical properties. However, after alloying with 10 at. % Al by e-gun deposition, the Ni/Ag(Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.},
doi = {10.1063/1.2431577},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 90,
place = {United States},
year = {2007},
month = {1}
}