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Title: Optimized growth of lattice-matched In{sub x}Al{sub 1-x}N/GaN heterostructures by molecular beam epitaxy

Abstract

The authors present a systematic study on the growth of the ternary compound In{sub x}Al{sub 1-x}N by molecular beam epitaxy. This work concentrates on In mole fractions x around 0.17, as this composition is in-plane lattice matched to GaN. At a growth temperature of 540 degree sign C, high quality material was obtained using a total metal to nitrogen flux ratio of {approx}1. Using these growth parameters, high quality GaN/InAlN superlattices were obtained without growth interruptions.

Authors:
; ; ; ;  [1];  [2]
  1. Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20883266
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 2; Other Information: DOI: 10.1063/1.2430940; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CRYSTAL GROWTH; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTOR MATERIALS; SUPERLATTICES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Schmult, S., Siegrist, T., Sergent, A. M., Manfra, M. J., Molnar, R. J., and MIT Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420. Optimized growth of lattice-matched In{sub x}Al{sub 1-x}N/GaN heterostructures by molecular beam epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2430940.
Schmult, S., Siegrist, T., Sergent, A. M., Manfra, M. J., Molnar, R. J., & MIT Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420. Optimized growth of lattice-matched In{sub x}Al{sub 1-x}N/GaN heterostructures by molecular beam epitaxy. United States. doi:10.1063/1.2430940.
Schmult, S., Siegrist, T., Sergent, A. M., Manfra, M. J., Molnar, R. J., and MIT Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420. Mon . "Optimized growth of lattice-matched In{sub x}Al{sub 1-x}N/GaN heterostructures by molecular beam epitaxy". United States. doi:10.1063/1.2430940.
@article{osti_20883266,
title = {Optimized growth of lattice-matched In{sub x}Al{sub 1-x}N/GaN heterostructures by molecular beam epitaxy},
author = {Schmult, S. and Siegrist, T. and Sergent, A. M. and Manfra, M. J. and Molnar, R. J. and MIT Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420},
abstractNote = {The authors present a systematic study on the growth of the ternary compound In{sub x}Al{sub 1-x}N by molecular beam epitaxy. This work concentrates on In mole fractions x around 0.17, as this composition is in-plane lattice matched to GaN. At a growth temperature of 540 degree sign C, high quality material was obtained using a total metal to nitrogen flux ratio of {approx}1. Using these growth parameters, high quality GaN/InAlN superlattices were obtained without growth interruptions.},
doi = {10.1063/1.2430940},
journal = {Applied Physics Letters},
number = 2,
volume = 90,
place = {United States},
year = {Mon Jan 08 00:00:00 EST 2007},
month = {Mon Jan 08 00:00:00 EST 2007}
}