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Title: Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?

Abstract

Secondary ion mass spectrometry and photoluminescence are employed to evaluate the origin and efficiency of hydrogen passivation of nitrogen in GaNAs and GaNP. The hydrogen profiles are found to closely follow the N distributions, providing unambiguous evidence for their preferential binding as the dominant mechanism for neutralization of N-induced modifications in the electronic structure of the materials. Though the exact number of H atoms involved in passivation may depend on the conditions of the H treatment and the host matrixes, it is generally found that more than three H atoms are required to bind to a N atom to achieve full passivation for both alloys.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [3];  [4];  [3]
  1. Department of Physics, Chemistry and Biology, Linkoeping University, S-58183 Linkoeping (Sweden)
  2. (Iran, Islamic Republic of)
  3. (United States)
  4. (Germany)
Publication Date:
OSTI Identifier:
20883265
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 2; Other Information: DOI: 10.1063/1.2425006; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXY; GALLIUM ALLOYS; GALLIUM ARSENIDES; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; HYDROGEN; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; NITROGEN; PASSIVATION; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS

Citation Formats

Buyanova, I. A., Chen, W. M., Izadifard, M., Pearton, S. J., Bihler, C., Brandt, M. S., Hong, Y. G., Tu, C. W., Department of Physics, Shahrood University of Technology, 36155 Shahrood, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching, and Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093-0407. Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?. United States: N. p., 2007. Web. doi:10.1063/1.2425006.
Buyanova, I. A., Chen, W. M., Izadifard, M., Pearton, S. J., Bihler, C., Brandt, M. S., Hong, Y. G., Tu, C. W., Department of Physics, Shahrood University of Technology, 36155 Shahrood, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching, & Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093-0407. Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?. United States. doi:10.1063/1.2425006.
Buyanova, I. A., Chen, W. M., Izadifard, M., Pearton, S. J., Bihler, C., Brandt, M. S., Hong, Y. G., Tu, C. W., Department of Physics, Shahrood University of Technology, 36155 Shahrood, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching, and Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093-0407. Mon . "Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?". United States. doi:10.1063/1.2425006.
@article{osti_20883265,
title = {Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?},
author = {Buyanova, I. A. and Chen, W. M. and Izadifard, M. and Pearton, S. J. and Bihler, C. and Brandt, M. S. and Hong, Y. G. and Tu, C. W. and Department of Physics, Shahrood University of Technology, 36155 Shahrood and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 and Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching and Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093-0407},
abstractNote = {Secondary ion mass spectrometry and photoluminescence are employed to evaluate the origin and efficiency of hydrogen passivation of nitrogen in GaNAs and GaNP. The hydrogen profiles are found to closely follow the N distributions, providing unambiguous evidence for their preferential binding as the dominant mechanism for neutralization of N-induced modifications in the electronic structure of the materials. Though the exact number of H atoms involved in passivation may depend on the conditions of the H treatment and the host matrixes, it is generally found that more than three H atoms are required to bind to a N atom to achieve full passivation for both alloys.},
doi = {10.1063/1.2425006},
journal = {Applied Physics Letters},
number = 2,
volume = 90,
place = {United States},
year = {Mon Jan 08 00:00:00 EST 2007},
month = {Mon Jan 08 00:00:00 EST 2007}
}