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Title: Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films

Abstract

Surface and interface electronic properties of plasma-deposited hydrogenated amorphous silicon nitride films have been investigated by means of optical second harmonic generation (SHG) technique. Polarization analysis shows that the nonlinear field origins from isotropic interfaces (film/substrate interface and film/air interface) whose spectral features are ascribed to surface/interface Si dangling bonds and strained Si-Si bonds. Differences and similarities with SHG spectra of pure amorphous silicon (a-Si:H) are discussed in terms of compositional inhomogeneities of the ternary alloy.

Authors:
; ; ; ;  [1];  [2]
  1. CNR-INFM Coherentia-Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II' Via Cintia, 80126 Naples (Italy)
  2. (Italy)
Publication Date:
OSTI Identifier:
20883264
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 2; Other Information: DOI: 10.1063/1.2424661; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; AMORPHOUS STATE; DEPOSITION; HARMONIC GENERATION; HYDROGEN; HYDROGENATION; INTERFACES; PLASMA; POLARIZATION; SILICON; SILICON NITRIDES; SUBSTRATES; TERNARY ALLOY SYSTEMS; THIN FILMS

Citation Formats

Lettieri, S., Merola, F., Maddalena, P., Ricciardi, C., Giorgis, F., and Dipartimento di Fisica, Laboratorio Materiali e Microsistemi, Politecnico di Torino C.so Duca degli Abruzzi 24, 10129 Turin. Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films. United States: N. p., 2007. Web. doi:10.1063/1.2424661.
Lettieri, S., Merola, F., Maddalena, P., Ricciardi, C., Giorgis, F., & Dipartimento di Fisica, Laboratorio Materiali e Microsistemi, Politecnico di Torino C.so Duca degli Abruzzi 24, 10129 Turin. Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films. United States. doi:10.1063/1.2424661.
Lettieri, S., Merola, F., Maddalena, P., Ricciardi, C., Giorgis, F., and Dipartimento di Fisica, Laboratorio Materiali e Microsistemi, Politecnico di Torino C.so Duca degli Abruzzi 24, 10129 Turin. Mon . "Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films". United States. doi:10.1063/1.2424661.
@article{osti_20883264,
title = {Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films},
author = {Lettieri, S. and Merola, F. and Maddalena, P. and Ricciardi, C. and Giorgis, F. and Dipartimento di Fisica, Laboratorio Materiali e Microsistemi, Politecnico di Torino C.so Duca degli Abruzzi 24, 10129 Turin},
abstractNote = {Surface and interface electronic properties of plasma-deposited hydrogenated amorphous silicon nitride films have been investigated by means of optical second harmonic generation (SHG) technique. Polarization analysis shows that the nonlinear field origins from isotropic interfaces (film/substrate interface and film/air interface) whose spectral features are ascribed to surface/interface Si dangling bonds and strained Si-Si bonds. Differences and similarities with SHG spectra of pure amorphous silicon (a-Si:H) are discussed in terms of compositional inhomogeneities of the ternary alloy.},
doi = {10.1063/1.2424661},
journal = {Applied Physics Letters},
number = 2,
volume = 90,
place = {United States},
year = {Mon Jan 08 00:00:00 EST 2007},
month = {Mon Jan 08 00:00:00 EST 2007}
}