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Title: Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy

Abstract

InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the (-211) family of crystal planes for all NW diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the NW tips, while NWs with lengths less than 300 nm were completely free of stacking faults.

Authors:
; ;  [1]
  1. Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4 L7 (Canada)
Publication Date:
OSTI Identifier:
20883257
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 1; Other Information: DOI: 10.1063/1.2429955; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATALYSTS; CRYSTAL GROWTH; CRYSTALS; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; STACKING FAULTS; SUBSTRATES

Citation Formats

Cornet, D. M., Mazzetti, V. G. M., and LaPierre, R. R. Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2429955.
Cornet, D. M., Mazzetti, V. G. M., & LaPierre, R. R. Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy. United States. doi:10.1063/1.2429955.
Cornet, D. M., Mazzetti, V. G. M., and LaPierre, R. R. Mon . "Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy". United States. doi:10.1063/1.2429955.
@article{osti_20883257,
title = {Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy},
author = {Cornet, D. M. and Mazzetti, V. G. M. and LaPierre, R. R.},
abstractNote = {InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the (-211) family of crystal planes for all NW diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the NW tips, while NWs with lengths less than 300 nm were completely free of stacking faults.},
doi = {10.1063/1.2429955},
journal = {Applied Physics Letters},
number = 1,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}