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Title: One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)

Abstract

Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 degree sign C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7x7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters.

Authors:
; ; ; ;  [1];  [2]
  1. Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1, Hiyoshi, Kokohu-ku, Yokohama 223-8522 (Japan) and Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Kawaguchi Center Building, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
  2. (Germany)
Publication Date:
OSTI Identifier:
20883256
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 1; Other Information: DOI: 10.1063/1.2426890; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC CLUSTERS; CRYSTAL GROWTH; DEPOSITION; GERMANIUM; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; SUBSTRATES

Citation Formats

Sekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M., Myslivecek, Josef, Voigtlaender, Bert, and Institute of Bio and Nanosystems IBN3, Research Center Juelich and Center of Nanoelectric Systems for Information Technology, 52425 Juelich. One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). United States: N. p., 2007. Web. doi:10.1063/1.2426890.
Sekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M., Myslivecek, Josef, Voigtlaender, Bert, & Institute of Bio and Nanosystems IBN3, Research Center Juelich and Center of Nanoelectric Systems for Information Technology, 52425 Juelich. One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). United States. doi:10.1063/1.2426890.
Sekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M., Myslivecek, Josef, Voigtlaender, Bert, and Institute of Bio and Nanosystems IBN3, Research Center Juelich and Center of Nanoelectric Systems for Information Technology, 52425 Juelich. Mon . "One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)". United States. doi:10.1063/1.2426890.
@article{osti_20883256,
title = {One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)},
author = {Sekiguchi, Takeharu and Yoshida, Shunji and Itoh, Kohei M. and Myslivecek, Josef and Voigtlaender, Bert and Institute of Bio and Nanosystems IBN3, Research Center Juelich and Center of Nanoelectric Systems for Information Technology, 52425 Juelich},
abstractNote = {Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 degree sign C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7x7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters.},
doi = {10.1063/1.2426890},
journal = {Applied Physics Letters},
number = 1,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}