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Title: High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy

Abstract

In{sub 0.8}Al{sub 0.2}As/InAs heterostructures were grown on virtual InAs substrates consisting of a relaxed InAs{sub y}P{sub 1-y} step-graded buffer grown on InP by molecular-beam epitaxy. Hall measurements revealed the presence of a high-mobility two-dimensional electron gas within the relaxed InAs layer, with a peak electron mobility of 133 000 cm{sup 2}/V s at 25 K. In contrast, identical InAlAs/InAs heterostructures grown directly on InAs buffers on InP showed only bulk transport characteristics. A combination of transport modeling and electron microscopy demonstrates that reduced dislocation scattering in the channel region is responsible for observing the two-dimensional transport within the relaxed InAs on graded InAsP. These results demonstrate the potential of achieving ultrahigh-speed InAs based high electron mobility transistors using relaxed, virtual InAs substrates on InP.

Authors:
; ; ; ;  [1]
  1. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)
Publication Date:
OSTI Identifier:
20883252
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 90; Journal Issue: 1; Other Information: DOI: 10.1063/1.2430403; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; DISLOCATIONS; ELECTRON GAS; ELECTRON MICROSCOPY; ELECTRON MOBILITY; HALL EFFECT; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; SCATTERING; SEMICONDUCTOR MATERIALS; SIMULATION; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K

Citation Formats

Lin, Y, Carlin, J A, Arehart, A R, Carlin, A M, and Ringel, S A. High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2430403.
Lin, Y, Carlin, J A, Arehart, A R, Carlin, A M, & Ringel, S A. High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy. United States. https://doi.org/10.1063/1.2430403
Lin, Y, Carlin, J A, Arehart, A R, Carlin, A M, and Ringel, S A. 2007. "High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy". United States. https://doi.org/10.1063/1.2430403.
@article{osti_20883252,
title = {High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy},
author = {Lin, Y and Carlin, J A and Arehart, A R and Carlin, A M and Ringel, S A},
abstractNote = {In{sub 0.8}Al{sub 0.2}As/InAs heterostructures were grown on virtual InAs substrates consisting of a relaxed InAs{sub y}P{sub 1-y} step-graded buffer grown on InP by molecular-beam epitaxy. Hall measurements revealed the presence of a high-mobility two-dimensional electron gas within the relaxed InAs layer, with a peak electron mobility of 133 000 cm{sup 2}/V s at 25 K. In contrast, identical InAlAs/InAs heterostructures grown directly on InAs buffers on InP showed only bulk transport characteristics. A combination of transport modeling and electron microscopy demonstrates that reduced dislocation scattering in the channel region is responsible for observing the two-dimensional transport within the relaxed InAs on graded InAsP. These results demonstrate the potential of achieving ultrahigh-speed InAs based high electron mobility transistors using relaxed, virtual InAs substrates on InP.},
doi = {10.1063/1.2430403},
url = {https://www.osti.gov/biblio/20883252}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 90,
place = {United States},
year = {2007},
month = {1}
}