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Title: Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source

Abstract

The authors present evidence of the reduction of fast ion energy from laser-produced Sn plasma by introducing a low energy prepulse. The energy of Sn ions was reduced from more than 5 keV to less than 150 eV nearly without loss of the in-band conversion from laser to 13.5 nm extreme ultraviolet (EUV) emission as compared with that of a single pulse. The reason may come from the interaction of the main pulse with preplasma instead of the full density solid surface. This makes it possible to use the full density Sn target in the practical EUV lithography source.

Authors:
;  [1]
  1. Department of Mechanical and Aerospace Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 (United States) and the Center for Energy Research, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 (United States)
Publication Date:
OSTI Identifier:
20883230
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 89; Journal Issue: 11; Other Information: DOI: 10.1063/1.2349831; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EV RANGE 100-1000; EXTREME ULTRAVIOLET RADIATION; KEV RANGE 01-10; LASER-PRODUCED PLASMA; LASERS; LIGHT TRANSMISSION; MITIGATION; PLASMA PRODUCTION; PULSES; TIN; TIN IONS

Citation Formats

Tao, Y, and Tillack, M S. Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source. United States: N. p., 2006. Web. doi:10.1063/1.2349831.
Tao, Y, & Tillack, M S. Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source. United States. https://doi.org/10.1063/1.2349831
Tao, Y, and Tillack, M S. 2006. "Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source". United States. https://doi.org/10.1063/1.2349831.
@article{osti_20883230,
title = {Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source},
author = {Tao, Y and Tillack, M S},
abstractNote = {The authors present evidence of the reduction of fast ion energy from laser-produced Sn plasma by introducing a low energy prepulse. The energy of Sn ions was reduced from more than 5 keV to less than 150 eV nearly without loss of the in-band conversion from laser to 13.5 nm extreme ultraviolet (EUV) emission as compared with that of a single pulse. The reason may come from the interaction of the main pulse with preplasma instead of the full density solid surface. This makes it possible to use the full density Sn target in the practical EUV lithography source.},
doi = {10.1063/1.2349831},
url = {https://www.osti.gov/biblio/20883230}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 89,
place = {United States},
year = {Mon Sep 11 00:00:00 EDT 2006},
month = {Mon Sep 11 00:00:00 EDT 2006}
}