ZnSe nanowires grown on the crystal surface by femtosecond laser ablation in air

Journal Article · Mon Sep 04 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2339202· OSTI ID:20883207

Jia, T Q; Chen, H X; Huang, M; Wu, X J; Zhao, F L; Baba, M; Suzuki, M; Kuroda, H; Qiu, J R; Li, R X; Xu, Z Z ^[1]

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1. Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan) and State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan University, Guangzhou 510275 (China)

Uniform ZnSe nanowires are observed on the ablation crater on ZnSe crystal surface irradiated by femtosecond lasers in air, while other parts of the sample surface are not polluted. The nanowire growth rate is about 5 {mu}m/s, it is higher than that fabricated by chemical vapor deposition method by a factor of 10{sup 4}. The nanowire length and diameter can be controlled by varying laser pulse energy and pulse number. The formation mechanism is studied and found to be self-catalyzed vapor-liquid-solid process.

• OSTI ID: 20883207
• Journal Information: Applied Physics Letters, Vol. 89, Issue 10; Other Information: DOI: 10.1063/1.2339202; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
AIR
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
IRRADIATION
LASERS
PULSES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
VAPORS
ZINC SELENIDES