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Title: Phase stability of epitaxially grown Ti{sub 2}AlN thin films

Abstract

The phase stability of M{sub n+1}AX{sub n} phase (M: early transition metal, A: A-group element, and X: C and/or N) Ti{sub 2}AlN thin films reactively sputtered onto MgO(111) and Al{sub 2}O{sub 3}(0001) substrates has been investigated by in situ x-ray diffraction and Rutherford backscattering. High substrate temperature deposition results in epitaxial Ti{sub 2}AlN growth with basal planes parallel to the substrate surface. In contrast to reported high thermal stability for bulk Ti-Al-N M{sub n+1}AX{sub n} phases in air, Ti{sub 2}AlN thin films in vacuum decompose already at {approx}800 deg. C. The decomposition proceeds by outward Al diffusion and evaporation, followed by detwinning of the as-formed Ti{sub 2}N atomic layers into cubic TiN{sub x} and intermediate phases.

Authors:
; ; ; ;  [1]
  1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
Publication Date:
OSTI Identifier:
20883170
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 89; Journal Issue: 7; Other Information: DOI: 10.1063/1.2335681; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; CRYSTAL GROWTH; DEPOSITION; DIFFUSION; EVAPORATION; LAYERS; MAGNESIUM OXIDES; PHASE STABILITY; PYROLYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TITANIUM NITRIDES; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION

Citation Formats

Beckers, M, Schell, N, Martins, R M. S., Muecklich, A, and Moeller, W. Phase stability of epitaxially grown Ti{sub 2}AlN thin films. United States: N. p., 2006. Web. doi:10.1063/1.2335681.
Beckers, M, Schell, N, Martins, R M. S., Muecklich, A, & Moeller, W. Phase stability of epitaxially grown Ti{sub 2}AlN thin films. United States. doi:10.1063/1.2335681.
Beckers, M, Schell, N, Martins, R M. S., Muecklich, A, and Moeller, W. Mon . "Phase stability of epitaxially grown Ti{sub 2}AlN thin films". United States. doi:10.1063/1.2335681.
@article{osti_20883170,
title = {Phase stability of epitaxially grown Ti{sub 2}AlN thin films},
author = {Beckers, M and Schell, N and Martins, R M. S. and Muecklich, A and Moeller, W},
abstractNote = {The phase stability of M{sub n+1}AX{sub n} phase (M: early transition metal, A: A-group element, and X: C and/or N) Ti{sub 2}AlN thin films reactively sputtered onto MgO(111) and Al{sub 2}O{sub 3}(0001) substrates has been investigated by in situ x-ray diffraction and Rutherford backscattering. High substrate temperature deposition results in epitaxial Ti{sub 2}AlN growth with basal planes parallel to the substrate surface. In contrast to reported high thermal stability for bulk Ti-Al-N M{sub n+1}AX{sub n} phases in air, Ti{sub 2}AlN thin films in vacuum decompose already at {approx}800 deg. C. The decomposition proceeds by outward Al diffusion and evaporation, followed by detwinning of the as-formed Ti{sub 2}N atomic layers into cubic TiN{sub x} and intermediate phases.},
doi = {10.1063/1.2335681},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 89,
place = {United States},
year = {2006},
month = {8}
}