Direct observation of the epitaxial growth of molecular layers on molecular single crystals

Journal Article · Mon Dec 25 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2423322· OSTI ID:20880196

Sassella, A; Borghesi, A; Campione, M; Tavazzi, S; Goletti, C; Bussetti, G; Chiaradia, P ^[1]

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1. Dipartimento di Scienza dei Materiali and CNISM, Universita di Milano-Bicocca, I-20125 Milan (Italy)

In this letter the authors use the evolution of reflectance anisotropy spectra with film thickness during the growth of organic molecular films of a prototype molecular system ({alpha}-quarterthiophene grown onto a single crystal of the same material) to demonstrate homoepitaxy. The real time monitoring of the optical anisotropy of a thin film during deposition by organic molecular beam epitaxy is assessed as a powerful tool to achieve an effective in situ control of the growth starting from the very early deposition stages.

• OSTI ID: 20880196
• Journal Information: Applied Physics Letters, Vol. 89, Issue 26; Other Information: DOI: 10.1063/1.2423322; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
CRYSTAL GROWTH
DEPOSITION
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
ORGANIC SEMICONDUCTORS
THICKNESS
THIN FILMS