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Title: Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO{sub 2} thin films

Abstract

A densely stacked silicon nanocrystal layer embedded in a SiO{sub 2} thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si.

Authors:
; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [3]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  2. (Singapore)
  3. (Hong Kong)
Publication Date:
OSTI Identifier:
20880183
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 25; Other Information: DOI: 10.1063/1.2410227; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTALLIZATION; CRYSTALS; DIELECTRIC MATERIALS; ELLIPSOMETRY; ION IMPLANTATION; LAYERS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SILICON; SILICON IONS; SILICON OXIDES; THIN FILMS

Citation Formats

Ding, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., Liu, Y. C., Tung, C. H., Trigg, A. D., Fung, S., Singapore Institute of Manufacturing Technology, Singapore 638075, Institute of Microelectronics, Singapore 117685, and Department of Physics, The University of Hong Kong. Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO{sub 2} thin films. United States: N. p., 2006. Web. doi:10.1063/1.2410227.
Ding, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., Liu, Y. C., Tung, C. H., Trigg, A. D., Fung, S., Singapore Institute of Manufacturing Technology, Singapore 638075, Institute of Microelectronics, Singapore 117685, & Department of Physics, The University of Hong Kong. Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO{sub 2} thin films. United States. doi:10.1063/1.2410227.
Ding, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., Liu, Y. C., Tung, C. H., Trigg, A. D., Fung, S., Singapore Institute of Manufacturing Technology, Singapore 638075, Institute of Microelectronics, Singapore 117685, and Department of Physics, The University of Hong Kong. Mon . "Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO{sub 2} thin films". United States. doi:10.1063/1.2410227.
@article{osti_20880183,
title = {Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO{sub 2} thin films},
author = {Ding, L. and Chen, T. P. and Wong, J. I. and Yang, M. and Liu, Y. and Ng, C. Y. and Liu, Y. C. and Tung, C. H. and Trigg, A. D. and Fung, S. and Singapore Institute of Manufacturing Technology, Singapore 638075 and Institute of Microelectronics, Singapore 117685 and Department of Physics, The University of Hong Kong},
abstractNote = {A densely stacked silicon nanocrystal layer embedded in a SiO{sub 2} thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si.},
doi = {10.1063/1.2410227},
journal = {Applied Physics Letters},
number = 25,
volume = 89,
place = {United States},
year = {Mon Dec 18 00:00:00 EST 2006},
month = {Mon Dec 18 00:00:00 EST 2006}
}
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