Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO{sub 2} thin films

Journal Article · Mon Dec 18 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2410227· OSTI ID:20880183

Ding, L; Chen, T P; Wong, J I; Yang, M; Liu, Y; Ng, C Y; Liu, Y C; Tung, C H; Trigg, A D; Fung, S ^[1]

---

1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

A densely stacked silicon nanocrystal layer embedded in a SiO{sub 2} thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si.

• OSTI ID: 20880183
• Journal Information: Applied Physics Letters, Vol. 89, Issue 25; Other Information: DOI: 10.1063/1.2410227; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTALLIZATION
CRYSTALS
DIELECTRIC MATERIALS
ELLIPSOMETRY
ION IMPLANTATION
LAYERS
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
SILICON
SILICON IONS
SILICON OXIDES
THIN FILMS