Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide

Journal Article · Mon Dec 11 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2405410· OSTI ID:20880168

Benyagoub, A; Audren, A; Thome, L; Garrido, F ^[1]

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1. Centre Interdisciplinaire de Recherche Ions Lasers (CIRIL-GANIL), CEA-CNRS-ENSICAEN, BP 5133, Bd Henri Becquerel, F-14070 Caen Cedex 5 (France)

Silicon carbide single crystals were irradiated at room temperature with low energy I ions and high energy Pb ions. It is found that the damaged layer formed by the elastic collisions generated during low energy I ion irradiation can readily be removed by the electronic excitations induced by swift Pb ions. This effect occurs at a temperature quite below that at which the conventional ion-beam induced crystallization process is generally achieved by nuclear energy loss. This finding is interesting both from a fundamental point of view for the understanding of the interaction of swift heavy ions with solids and for a large number of technological applications.

• OSTI ID: 20880168
• Journal Information: Applied Physics Letters, Vol. 89, Issue 24; Other Information: DOI: 10.1063/1.2405410; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALLIZATION
EXCITATION
HEAVY IONS
IODINE IONS
ION BEAMS
IRRADIATION
LEAD IONS
MONOCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
TEMPERATURE RANGE 0273-0400 K