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Title: Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots

Abstract

The authors report the formation and optical characteristics of type-II, strain-relieved, and densely stacked GaSb/GaAs quantum dots (QDs) using an interfacial misfit (IMF) growth mode. A moderate V/III ratio during the growth of GaSb QDs produces strain-relieved QDs facilitated by the IMF array without Sb segregation associated with defects and threading dislocations. In contrast, a low V/III ratio establishes conventional Stranski-Krastanov QDs. The strain-free nature of the IMF QDs allows densely packed, multistacked ensembles which retain very high crystalline quality demonstrated by x-ray diffraction, room-temperature photoluminescence, and electroluminescence. The possibility for dense stacking enabled by the strain-relieved growth mode may prove beneficial for QD sensors, emitters, and solar cells.

Authors:
; ; ; ; ;  [1]
  1. Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)
Publication Date:
OSTI Identifier:
20880154
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 89; Journal Issue: 20; Other Information: DOI: 10.1063/1.2390654; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DISLOCATIONS; ELECTROLUMINESCENCE; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEGREGATION; SEMICONDUCTOR MATERIALS; SOLAR CELLS; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION

Citation Formats

Tatebayashi, J, Khoshakhlagh, A, Huang, S H, Dawson, L R, Balakrishnan, G, and Huffaker, D L. Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots. United States: N. p., 2006. Web. doi:10.1063/1.2390654.
Tatebayashi, J, Khoshakhlagh, A, Huang, S H, Dawson, L R, Balakrishnan, G, & Huffaker, D L. Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots. United States. doi:10.1063/1.2390654.
Tatebayashi, J, Khoshakhlagh, A, Huang, S H, Dawson, L R, Balakrishnan, G, and Huffaker, D L. Mon . "Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots". United States. doi:10.1063/1.2390654.
@article{osti_20880154,
title = {Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots},
author = {Tatebayashi, J and Khoshakhlagh, A and Huang, S H and Dawson, L R and Balakrishnan, G and Huffaker, D L},
abstractNote = {The authors report the formation and optical characteristics of type-II, strain-relieved, and densely stacked GaSb/GaAs quantum dots (QDs) using an interfacial misfit (IMF) growth mode. A moderate V/III ratio during the growth of GaSb QDs produces strain-relieved QDs facilitated by the IMF array without Sb segregation associated with defects and threading dislocations. In contrast, a low V/III ratio establishes conventional Stranski-Krastanov QDs. The strain-free nature of the IMF QDs allows densely packed, multistacked ensembles which retain very high crystalline quality demonstrated by x-ray diffraction, room-temperature photoluminescence, and electroluminescence. The possibility for dense stacking enabled by the strain-relieved growth mode may prove beneficial for QD sensors, emitters, and solar cells.},
doi = {10.1063/1.2390654},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 89,
place = {United States},
year = {2006},
month = {11}
}