Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots
- Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)
The authors report the formation and optical characteristics of type-II, strain-relieved, and densely stacked GaSb/GaAs quantum dots (QDs) using an interfacial misfit (IMF) growth mode. A moderate V/III ratio during the growth of GaSb QDs produces strain-relieved QDs facilitated by the IMF array without Sb segregation associated with defects and threading dislocations. In contrast, a low V/III ratio establishes conventional Stranski-Krastanov QDs. The strain-free nature of the IMF QDs allows densely packed, multistacked ensembles which retain very high crystalline quality demonstrated by x-ray diffraction, room-temperature photoluminescence, and electroluminescence. The possibility for dense stacking enabled by the strain-relieved growth mode may prove beneficial for QD sensors, emitters, and solar cells.
- OSTI ID:
- 20880154
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 20; Other Information: DOI: 10.1063/1.2390654; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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