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Title: TiAlN/TiAlON/Si{sub 3}N{sub 4} tandem absorber for high temperature solar selective applications

Abstract

A tandem absorber of TiAlN/TiAlON/Si{sub 3}N{sub 4} is prepared using a magnetron sputtering process. The graded composition of the individual component layers of the tandem absorber produces a film with a refractive index increasing from the surface to the substrate, which exhibits a high absorptance (0.95) and a low emittance (0.07). The tandem absorber is stable in air up to 600 deg. C for 2 h, indicating its importance for high temperature solar selective applications. The thermal stability of the tandem absorber is attributed to high oxidation resistance and microstructural stability of the component materials at higher temperatures.

Authors:
; ; ; ; ;  [1];  [2];  [2]
  1. Surface Engineering Division, National Aerospace Laboratories, Bangalore 560 017 (India)
  2. (India)
Publication Date:
OSTI Identifier:
20880086
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 19; Other Information: DOI: 10.1063/1.2387897; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; ALUMINIUM NITRIDES; ANTIREFLECTION COATINGS; CRYSTAL STRUCTURE; FILMS; LAYERS; MICROSTRUCTURE; OXIDATION; REFRACTIVE INDEX; SILICON NITRIDES; SOLAR ABSORBERS; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TIME DEPENDENCE; TITANIUM NITRIDES

Citation Formats

Barshilia, Harish C., Selvakumar, N., Rajam, K. S., Sridhara Rao, D. V., Muraleedharan, K., Biswas, A., Electron Microscopy Group, Defence Metallurgical Research Laboratory, Hyderabad 500 058, and Spectroscopy Division, Bhabha Atomic Research Center, Mumbai 400 085. TiAlN/TiAlON/Si{sub 3}N{sub 4} tandem absorber for high temperature solar selective applications. United States: N. p., 2006. Web. doi:10.1063/1.2387897.
Barshilia, Harish C., Selvakumar, N., Rajam, K. S., Sridhara Rao, D. V., Muraleedharan, K., Biswas, A., Electron Microscopy Group, Defence Metallurgical Research Laboratory, Hyderabad 500 058, & Spectroscopy Division, Bhabha Atomic Research Center, Mumbai 400 085. TiAlN/TiAlON/Si{sub 3}N{sub 4} tandem absorber for high temperature solar selective applications. United States. doi:10.1063/1.2387897.
Barshilia, Harish C., Selvakumar, N., Rajam, K. S., Sridhara Rao, D. V., Muraleedharan, K., Biswas, A., Electron Microscopy Group, Defence Metallurgical Research Laboratory, Hyderabad 500 058, and Spectroscopy Division, Bhabha Atomic Research Center, Mumbai 400 085. Mon . "TiAlN/TiAlON/Si{sub 3}N{sub 4} tandem absorber for high temperature solar selective applications". United States. doi:10.1063/1.2387897.
@article{osti_20880086,
title = {TiAlN/TiAlON/Si{sub 3}N{sub 4} tandem absorber for high temperature solar selective applications},
author = {Barshilia, Harish C. and Selvakumar, N. and Rajam, K. S. and Sridhara Rao, D. V. and Muraleedharan, K. and Biswas, A. and Electron Microscopy Group, Defence Metallurgical Research Laboratory, Hyderabad 500 058 and Spectroscopy Division, Bhabha Atomic Research Center, Mumbai 400 085},
abstractNote = {A tandem absorber of TiAlN/TiAlON/Si{sub 3}N{sub 4} is prepared using a magnetron sputtering process. The graded composition of the individual component layers of the tandem absorber produces a film with a refractive index increasing from the surface to the substrate, which exhibits a high absorptance (0.95) and a low emittance (0.07). The tandem absorber is stable in air up to 600 deg. C for 2 h, indicating its importance for high temperature solar selective applications. The thermal stability of the tandem absorber is attributed to high oxidation resistance and microstructural stability of the component materials at higher temperatures.},
doi = {10.1063/1.2387897},
journal = {Applied Physics Letters},
number = 19,
volume = 89,
place = {United States},
year = {Mon Nov 06 00:00:00 EST 2006},
month = {Mon Nov 06 00:00:00 EST 2006}
}