Very short wavelength ({lambda}=3.1-3.3 {mu}m) quantum cascade lasers

Journal Article · Mon Nov 06 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2387473· OSTI ID:20880084

Devenson, J; Barate, D; Cathabard, O; Teissier, R; Baranov, A N ^[1]

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1. Centre d'Electronique et de Microoptoelectronique de Montpellier, UMR5507 CNRS/Universite Montpellier 2, 34095 Montpellier (France)

Quantum cascade lasers emitting at wavelengths as short as 3.1-3.3 {mu}m are reported. Such high intersubband emission energies (up to 400 meV) have been obtained thanks to the high conduction band offset of the InAs/AlSb material system. The structures, grown by molecular beam epitaxy on InAs substrates, are based on the bound-to-continuum design and use a low loss plasmon enhanced waveguide consisting of n{sup +}-InAs cladding layers with InAs/AlSb superlattice spacers surrounding the active zone. The lasers exhibit threshold current densities close to 3 kA/cm{sup 2} at 83 K and operate in pulsed mode up to 240 K.

• OSTI ID: 20880084
• Journal Information: Applied Physics Letters, Vol. 89, Issue 19; Other Information: DOI: 10.1063/1.2387473; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ANTIMONIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
STIMULATED EMISSION
SUBSTRATES
SUPERLATTICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
THRESHOLD CURRENT
WAVEGUIDES