On optical activity of Er{sup 3+} ions in Si-rich SiO{sub 2} waveguides
- Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam (Netherlands)
Photoluminescence spectroscopy was used to explore the optical activity of Er{sup 3+} ions in Si-rich SiO{sub 2} waveguides prepared by ion implantation. Measurements were performed for a series of materials characterized by different Si excess levels, Er concentrations, and annealing temperatures. The highest fraction of optically active Er{sup 3+} ions which can be efficiently activated by nonresonant pumping was found to be 2.6%. This was realized in a waveguide with an Er concentration of [Er]=10{sup 18} cm{sup -3} and Si excess of 20%, annealed at 900 deg. C. This optical activity level is insufficient to realize optical gain. It is therefore clear that further material improvement is needed before optical amplification in SiO{sub 2}:Er matrices sensitized by Si nanocrystals/nanoclusters can be achieved.
- OSTI ID:
- 20880055
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 17; Other Information: DOI: 10.1063/1.2369674; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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