skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy

Abstract

Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy (MBE) are investigated. It is found that electrical properties of the two-dimensional electron gas (2DEG) in the heterostructures grown on 2.0 deg. -off vicinal substrates are superior to those grown on the 0.5 deg.-off vicinal substrates. Anisotropic phenomenon of the 2DEG mobility in the heterostructures grown on 2.0 deg.-off substrates is demonstrated, which strongly relates to the macrostep structures on the surface. The 2DEG mobility as high as 2018 cm{sup 2}/V s is obtained at the room temperature from the authors' all-MBE-grown sample measured in the direction parallel to the macrostep. It is suggested that the direction effect should be taken into account when designing the device structure.

Authors:
; ; ;  [1]
  1. Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)
Publication Date:
OSTI Identifier:
20880054
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 89; Journal Issue: 17; Other Information: DOI: 10.1063/1.2364864; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANISOTROPY; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; ELECTRON GAS; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Shen, X Q, Okumura, H, Furuta, K, Nakamura, N, R and D Association for Future Electron Devices, c/o National Institute of Advanced Industrial Science and Technology, and Graduate School of Integrated Basic Science, Nihon University, 3-25-40 Sakurajousui, Setagaya-ku Tokyo, 156-8550. Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy. United States: N. p., 2006. Web. doi:10.1063/1.2364864.
Shen, X Q, Okumura, H, Furuta, K, Nakamura, N, R and D Association for Future Electron Devices, c/o National Institute of Advanced Industrial Science and Technology, & Graduate School of Integrated Basic Science, Nihon University, 3-25-40 Sakurajousui, Setagaya-ku Tokyo, 156-8550. Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy. United States. https://doi.org/10.1063/1.2364864
Shen, X Q, Okumura, H, Furuta, K, Nakamura, N, R and D Association for Future Electron Devices, c/o National Institute of Advanced Industrial Science and Technology, and Graduate School of Integrated Basic Science, Nihon University, 3-25-40 Sakurajousui, Setagaya-ku Tokyo, 156-8550. 2006. "Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy". United States. https://doi.org/10.1063/1.2364864.
@article{osti_20880054,
title = {Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy},
author = {Shen, X Q and Okumura, H and Furuta, K and Nakamura, N and R and D Association for Future Electron Devices, c/o National Institute of Advanced Industrial Science and Technology and Graduate School of Integrated Basic Science, Nihon University, 3-25-40 Sakurajousui, Setagaya-ku Tokyo, 156-8550},
abstractNote = {Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy (MBE) are investigated. It is found that electrical properties of the two-dimensional electron gas (2DEG) in the heterostructures grown on 2.0 deg. -off vicinal substrates are superior to those grown on the 0.5 deg.-off vicinal substrates. Anisotropic phenomenon of the 2DEG mobility in the heterostructures grown on 2.0 deg.-off substrates is demonstrated, which strongly relates to the macrostep structures on the surface. The 2DEG mobility as high as 2018 cm{sup 2}/V s is obtained at the room temperature from the authors' all-MBE-grown sample measured in the direction parallel to the macrostep. It is suggested that the direction effect should be taken into account when designing the device structure.},
doi = {10.1063/1.2364864},
url = {https://www.osti.gov/biblio/20880054}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 89,
place = {United States},
year = {Mon Oct 23 00:00:00 EDT 2006},
month = {Mon Oct 23 00:00:00 EDT 2006}
}