Enhancement of quantum well intermixing on InP/InGaAs/InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion

Journal Article · Mon Oct 16 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2364058· OSTI ID:20880049

Francois, A; Aimez, V; Beauvais, J; Gendry, M; Regreny, P ^[1]

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1. Centre de Recherche en Nanofabrication et en Nanocaracterisation, Universite de Sherbrooke, 2500 Boulevard de l'Universite, Sherbrooke, Quebec J1K 2R1 (Canada)

Quantum well intermixing was studied on InP/InGaAs/InGaAsP heterostructures under stress induced by a TiO{sub x} surface stressor. Results provide a comparison of thermal emission wavelength shift and effective emission wavelength shift for samples intermixed with and without applied stress. It is shown that TiO{sub x} decreases the measured thermal shift depending on the amplitude of the induced stress. It is also shown that the diffusion of point defects created during ion implantation prior to TiO{sub x} stressor deposition is significantly enhanced. This results in an increase of the effective wavelength shift by up to 300%.

• OSTI ID: 20880049
• Journal Information: Applied Physics Letters, Vol. 89, Issue 16; Other Information: DOI: 10.1063/1.2364058; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ION IMPLANTATION
POINT DEFECTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
STRESSES
TITANIUM OXIDES
WAVELENGTHS