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Title: Interface structure and thermal stability of epitaxial SrTiO{sub 3} thin films on Si (001)

Abstract

We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to {approx}550 deg.C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 deg.C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.

Authors:
; ; ; ; ; ;  [1]
  1. Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854 (United States)
Publication Date:
OSTI Identifier:
20879969
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 100; Journal Issue: 1; Other Information: DOI: 10.1063/1.2206710; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DESORPTION; DIELECTRIC MATERIALS; INTERFACES; MOLECULAR BEAM EPITAXY; RECRYSTALLIZATION; ROUGHNESS; SILICON; SILICON OXIDES; STRONTIUM OXIDES; STRONTIUM SILICATES; STRONTIUM TITANATES; THIN FILMS

Citation Formats

Goncharova, L V, Starodub, D G, Garfunkel, E, Gustafsson, T, Vaithyanathan, V, Lettieri, J, Schlom, D G, Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, and Department of Material Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802. Interface structure and thermal stability of epitaxial SrTiO{sub 3} thin films on Si (001). United States: N. p., 2006. Web. doi:10.1063/1.2206710.
Goncharova, L V, Starodub, D G, Garfunkel, E, Gustafsson, T, Vaithyanathan, V, Lettieri, J, Schlom, D G, Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, & Department of Material Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802. Interface structure and thermal stability of epitaxial SrTiO{sub 3} thin films on Si (001). United States. doi:10.1063/1.2206710.
Goncharova, L V, Starodub, D G, Garfunkel, E, Gustafsson, T, Vaithyanathan, V, Lettieri, J, Schlom, D G, Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, and Department of Material Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802. Sat . "Interface structure and thermal stability of epitaxial SrTiO{sub 3} thin films on Si (001)". United States. doi:10.1063/1.2206710.
@article{osti_20879969,
title = {Interface structure and thermal stability of epitaxial SrTiO{sub 3} thin films on Si (001)},
author = {Goncharova, L V and Starodub, D G and Garfunkel, E and Gustafsson, T and Vaithyanathan, V and Lettieri, J and Schlom, D G and Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854 and Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854 and Department of Material Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802},
abstractNote = {We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to {approx}550 deg.C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 deg.C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.},
doi = {10.1063/1.2206710},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 1,
volume = 100,
place = {United States},
year = {2006},
month = {7}
}