skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Memory in Nonlinear Ionization of Transparent Solids

Abstract

We demonstrate a shot-to-shot reduction in the threshold laser intensity for ionization of bulk glasses illuminated by intense femtosecond pulses. For SiO{sub 2} the threshold change serves as positive feedback reenforcing the process that produced it. This constitutes a memory in nonlinear ionization of the material. The threshold change saturates with the number of pulses incident at a given spot. Irrespective of the pulse energy, the magnitude of the saturated threshold change is constant ({approx}20%). However, the number of shots required to reach saturation does depend on the pulse energy. Recognition of a memory in ionization is vital to understand multishot optical or electrical breakdown phenomena in dielectrics.

Authors:
; ; ; ; ;  [1];  [1];  [2];  [3]
  1. National Research Council of Canada, Ottawa, K1A 0R6 (Canada)
  2. (Canada)
  3. Department of Physics, University of Ottawa, Ottawa, K1N 6N5 (Canada)
Publication Date:
OSTI Identifier:
20861518
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 97; Journal Issue: 25; Other Information: DOI: 10.1103/PhysRevLett.97.253001; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; 74 ATOMIC AND MOLECULAR PHYSICS; DIELECTRIC MATERIALS; ELECTRICAL FAULTS; FEEDBACK; GLASS; IONIZATION; LASERS; NONLINEAR PROBLEMS; PULSES; SILICON OXIDES

Citation Formats

Rajeev, P. P., Simova, E., Hnatovsky, C., Taylor, R. S., Rayner, D. M., Corkum, P. B., Gertsvolf, M., Department of Physics, University of Ottawa, Ottawa, K1N 6N5, and Bhardwaj, V. R.. Memory in Nonlinear Ionization of Transparent Solids. United States: N. p., 2006. Web. doi:10.1103/PHYSREVLETT.97.253001.
Rajeev, P. P., Simova, E., Hnatovsky, C., Taylor, R. S., Rayner, D. M., Corkum, P. B., Gertsvolf, M., Department of Physics, University of Ottawa, Ottawa, K1N 6N5, & Bhardwaj, V. R.. Memory in Nonlinear Ionization of Transparent Solids. United States. doi:10.1103/PHYSREVLETT.97.253001.
Rajeev, P. P., Simova, E., Hnatovsky, C., Taylor, R. S., Rayner, D. M., Corkum, P. B., Gertsvolf, M., Department of Physics, University of Ottawa, Ottawa, K1N 6N5, and Bhardwaj, V. R.. Fri . "Memory in Nonlinear Ionization of Transparent Solids". United States. doi:10.1103/PHYSREVLETT.97.253001.
@article{osti_20861518,
title = {Memory in Nonlinear Ionization of Transparent Solids},
author = {Rajeev, P. P. and Simova, E. and Hnatovsky, C. and Taylor, R. S. and Rayner, D. M. and Corkum, P. B. and Gertsvolf, M. and Department of Physics, University of Ottawa, Ottawa, K1N 6N5 and Bhardwaj, V. R.},
abstractNote = {We demonstrate a shot-to-shot reduction in the threshold laser intensity for ionization of bulk glasses illuminated by intense femtosecond pulses. For SiO{sub 2} the threshold change serves as positive feedback reenforcing the process that produced it. This constitutes a memory in nonlinear ionization of the material. The threshold change saturates with the number of pulses incident at a given spot. Irrespective of the pulse energy, the magnitude of the saturated threshold change is constant ({approx}20%). However, the number of shots required to reach saturation does depend on the pulse energy. Recognition of a memory in ionization is vital to understand multishot optical or electrical breakdown phenomena in dielectrics.},
doi = {10.1103/PHYSREVLETT.97.253001},
journal = {Physical Review Letters},
number = 25,
volume = 97,
place = {United States},
year = {Fri Dec 22 00:00:00 EST 2006},
month = {Fri Dec 22 00:00:00 EST 2006}
}