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Title: Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Abstract

Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of {approx}6x10{sup 14} cm{sup -2}. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

Authors:
; ; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [3]
  1. U.S. Army Research Office, Durham, North Carolina 27709 (United States)
  2. (United States)
  3. (United Kingdom)
Publication Date:
OSTI Identifier:
20860985
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 15; Other Information: DOI: 10.1063/1.2357552; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; EPITAXY; EXCITATION; GADOLINIUM IONS; ION IMPLANTATION; LASERS; LAYERS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET RADIATION

Citation Formats

Zavada, J. M., Nepal, N., Lin, J. Y., Jiang, H. X., Brown, E., Hoemmerich, U., Hite, J., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Gwilliam, R., Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, Department of Physics, Hampton University, Hampton, Virginia 23668, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, and Surrey Ion Beam Center, University of Surrey, Guildford, Surrey GU2 7XH. Ultraviolet photoluminescence from Gd-implanted AlN epilayers. United States: N. p., 2006. Web. doi:10.1063/1.2357552.
Zavada, J. M., Nepal, N., Lin, J. Y., Jiang, H. X., Brown, E., Hoemmerich, U., Hite, J., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Gwilliam, R., Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, Department of Physics, Hampton University, Hampton, Virginia 23668, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, & Surrey Ion Beam Center, University of Surrey, Guildford, Surrey GU2 7XH. Ultraviolet photoluminescence from Gd-implanted AlN epilayers. United States. doi:10.1063/1.2357552.
Zavada, J. M., Nepal, N., Lin, J. Y., Jiang, H. X., Brown, E., Hoemmerich, U., Hite, J., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Gwilliam, R., Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, Department of Physics, Hampton University, Hampton, Virginia 23668, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, and Surrey Ion Beam Center, University of Surrey, Guildford, Surrey GU2 7XH. 2006. "Ultraviolet photoluminescence from Gd-implanted AlN epilayers". United States. doi:10.1063/1.2357552.
@article{osti_20860985,
title = {Ultraviolet photoluminescence from Gd-implanted AlN epilayers},
author = {Zavada, J. M. and Nepal, N. and Lin, J. Y. and Jiang, H. X. and Brown, E. and Hoemmerich, U. and Hite, J. and Thaler, G. T. and Abernathy, C. R. and Pearton, S. J. and Gwilliam, R. and Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 and Department of Physics, Hampton University, Hampton, Virginia 23668 and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 and Surrey Ion Beam Center, University of Surrey, Guildford, Surrey GU2 7XH},
abstractNote = {Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of {approx}6x10{sup 14} cm{sup -2}. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.},
doi = {10.1063/1.2357552},
journal = {Applied Physics Letters},
number = 15,
volume = 89,
place = {United States},
year = 2006,
month =
}
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