Selective growth of Ge islands on nanometer-scale patterned SiO{sub 2}/Si substrate by molecular beam epitaxy

Journal Article · Mon Aug 07 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2335976· OSTI ID:20860673

Yoon, Tae-Sik; Zhao, Zuoming; Liu, Jian; Xie, Ya-Hong; Ryu, Du yeol; Russell, Thomas P; Kim, Hyun-Mi; Kim, Ki-Bum ^[1]

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1. Department of Materials Science and Engineering, University of California at Los Angeles, Box 951595, Los Angeles, California 90095-1595 (United States)

The authors studied the selective growth of Ge islands by molecular beam epitaxy on Si(001) covered with nanometer-scale patterned SiO{sub 2} mask generated using self-assembled diblock copolymer. Selective growth is made possible by Ge adatoms desorbing from the SiO{sub 2} surface as well as diffusing into the exposed Si area. For the Ge coverage of 2 nm, multiple islands are observed along the periphery of individual exposed Si areas. At 3.5 nm coverage, the coalescence of small islands with significant strain relaxation becomes evident. The ramifications of the multiple islands morphology and their coalescence on potential device applications are discussed.

• OSTI ID: 20860673
• Journal Information: Applied Physics Letters, Vol. 89, Issue 6; Other Information: DOI: 10.1063/1.2335976; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COALESCENCE
COPOLYMERS
CRYSTAL GROWTH
DESORPTION
GERMANIUM
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
MORPHOLOGY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
STRESS RELAXATION
SUBSTRATES