Low density InAs quantum dots grown on GaAs nanoholes

Journal Article · Mon Jul 24 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2244043· OSTI ID:20860606

Liang, B L; Wang, Zh M; Lee, J H; Sablon, K; Mazur, Yu I; Salamo, G J ^[1]

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1. Physics Department, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

A growth technique combining droplet epitaxy and molecular beam epitaxy (MBE) is developed to obtain a low density of InAs quantum dots (QDs) on GaAs nanoholes. This growth technique is simple, flexible, and does not require additional substrate processing. It makes possible separate control of the QD density via droplet epitaxy and the QD quality via MBE growth. In this letter the authors report the use of this technique to produce InAs QDs with a low density of 2.7x10{sup 8} cm{sup -2} as well as good photoluminescence properties. The resulting samples are suitable for single QD device fabrication and applications.

• OSTI ID: 20860606
• Journal Information: Applied Physics Letters, Vol. 89, Issue 4; Other Information: DOI: 10.1063/1.2244043; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES