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Title: Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence

Abstract

A combination of high-resolution x-ray diffraction and a technique of x-ray standing-wave fluorescence at grazing incidence is employed to study the structure of a (Ga,Mn)As-diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single-crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration to Mn atoms at random noncrystallographic positions. In the epilayer, Mn incorporated at the interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coefficient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.

Authors:
;  [1]; ; ; ;  [2];  [3];  [4]
  1. Faculty of Mathematics and Physics, Department of Electronic Structures, Charles University, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)
  2. Institute of Physics ASCR, Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic)
  3. Institute of Physics ASCR, Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic)
  4. (United Kingdom)
Publication Date:
OSTI Identifier:
20853980
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 74; Journal Issue: 24; Other Information: DOI: 10.1103/PhysRevB.74.245205; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMS; DENSITY; EPITAXY; FERROMAGNETIC MATERIALS; FLUORESCENCE; GALLIUM ARSENIDES; INTERSTITIALS; LAYERS; MAGNETIC SEMICONDUCTORS; MANGANESE ARSENIDES; STANDING WAVES; SURFACES; X-RAY DIFFRACTION; X-RAY FLUORESCENCE ANALYSIS

Citation Formats

Holy, V., Matej, Z., Pacherova, O., Novak, V., Cukr, M., Olejnik, K., Jungwirth, T., and School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD. Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.74.245205.
Holy, V., Matej, Z., Pacherova, O., Novak, V., Cukr, M., Olejnik, K., Jungwirth, T., & School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD. Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence. United States. doi:10.1103/PHYSREVB.74.245205.
Holy, V., Matej, Z., Pacherova, O., Novak, V., Cukr, M., Olejnik, K., Jungwirth, T., and School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD. Fri . "Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence". United States. doi:10.1103/PHYSREVB.74.245205.
@article{osti_20853980,
title = {Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence},
author = {Holy, V. and Matej, Z. and Pacherova, O. and Novak, V. and Cukr, M. and Olejnik, K. and Jungwirth, T. and School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD},
abstractNote = {A combination of high-resolution x-ray diffraction and a technique of x-ray standing-wave fluorescence at grazing incidence is employed to study the structure of a (Ga,Mn)As-diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single-crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration to Mn atoms at random noncrystallographic positions. In the epilayer, Mn incorporated at the interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coefficient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.},
doi = {10.1103/PHYSREVB.74.245205},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 24,
volume = 74,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2006},
month = {Fri Dec 15 00:00:00 EST 2006}
}