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Title: Expansion and melting of Xe nanocrystals in Si

Abstract

Xe agglomerates confined in a Si matrix by ion implantation were synthesized with different size depending on the implantation process and/or the thermal treatment. At low temperature Xe nanocrystals are formed, whose expansion and melting were studied in the range 15-300 K. Previous high resolution x-ray diffraction spectra were corroborated with complementary techniques such as two-dimensional imaging plate patterns and transmission electron microscopy. We detected fcc Xe nanocrystals whose properties were size dependent. The experiments showed that in annealed samples epitaxial condensation of small Xe clusters, on the cavities of the Si matrix, gave in fact expanded and oriented Xe, suggesting a possible preferential growth of Xe (311) planes oriented orthogonally to the Si[02-2] direction. On the contrary, small Xe clusters in an amorphous Si matrix have a fcc lattice contracted as a consequence of surface tension. Furthermore, a solid-to-liquid phase transition size dependent was found. Expansion of fcc Xe lattice was accurately determined as a function of the temperature. Overpressurized nanocrystals and/or binary size distributions were disproved.

Authors:
; ; ; ;  [1];  [2];  [3]
  1. Dipartimento di Fisica e Astronomia, Universita di Catania, MATIS-Istituto Nazionale di Fisica della Materia, Via Santa Sofia 64, 95123 Catania (Italy)
  2. (France)
  3. (United States)
Publication Date:
OSTI Identifier:
20853977
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 74; Journal Issue: 23; Other Information: DOI: 10.1103/PhysRevB.74.235436; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DISTRIBUTION; EPITAXY; EXPANSION; FCC LATTICES; ION IMPLANTATION; LIQUIDS; MELTING; NANOSTRUCTURES; PLATES; SEMICONDUCTOR MATERIALS; SILICON; SOLIDS; SURFACE TENSION; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; XENON

Citation Formats

Faraci, Giuseppe, Pennisi, Agata R., Zontone, Federico, Li, Boquan, Petrov, Ivan, ESRF, European Synchrotron Research Facility, Boite Postale 220, F-38043 Grenoble Cedex, and CMM-Center for Microanalysis of Materials, University of Illinois, Urbana, Illinois 61801. Expansion and melting of Xe nanocrystals in Si. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.74.235436.
Faraci, Giuseppe, Pennisi, Agata R., Zontone, Federico, Li, Boquan, Petrov, Ivan, ESRF, European Synchrotron Research Facility, Boite Postale 220, F-38043 Grenoble Cedex, & CMM-Center for Microanalysis of Materials, University of Illinois, Urbana, Illinois 61801. Expansion and melting of Xe nanocrystals in Si. United States. doi:10.1103/PHYSREVB.74.235436.
Faraci, Giuseppe, Pennisi, Agata R., Zontone, Federico, Li, Boquan, Petrov, Ivan, ESRF, European Synchrotron Research Facility, Boite Postale 220, F-38043 Grenoble Cedex, and CMM-Center for Microanalysis of Materials, University of Illinois, Urbana, Illinois 61801. Fri . "Expansion and melting of Xe nanocrystals in Si". United States. doi:10.1103/PHYSREVB.74.235436.
@article{osti_20853977,
title = {Expansion and melting of Xe nanocrystals in Si},
author = {Faraci, Giuseppe and Pennisi, Agata R. and Zontone, Federico and Li, Boquan and Petrov, Ivan and ESRF, European Synchrotron Research Facility, Boite Postale 220, F-38043 Grenoble Cedex and CMM-Center for Microanalysis of Materials, University of Illinois, Urbana, Illinois 61801},
abstractNote = {Xe agglomerates confined in a Si matrix by ion implantation were synthesized with different size depending on the implantation process and/or the thermal treatment. At low temperature Xe nanocrystals are formed, whose expansion and melting were studied in the range 15-300 K. Previous high resolution x-ray diffraction spectra were corroborated with complementary techniques such as two-dimensional imaging plate patterns and transmission electron microscopy. We detected fcc Xe nanocrystals whose properties were size dependent. The experiments showed that in annealed samples epitaxial condensation of small Xe clusters, on the cavities of the Si matrix, gave in fact expanded and oriented Xe, suggesting a possible preferential growth of Xe (311) planes oriented orthogonally to the Si[02-2] direction. On the contrary, small Xe clusters in an amorphous Si matrix have a fcc lattice contracted as a consequence of surface tension. Furthermore, a solid-to-liquid phase transition size dependent was found. Expansion of fcc Xe lattice was accurately determined as a function of the temperature. Overpressurized nanocrystals and/or binary size distributions were disproved.},
doi = {10.1103/PHYSREVB.74.235436},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 23,
volume = 74,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2006},
month = {Fri Dec 15 00:00:00 EST 2006}
}