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Title: Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition

Abstract

Layered self-standing diamond films, consisting of an upper layer, buffer layer, and a lower layer, were fabricated by fluctuating the ratio of methane to hydrogen in high power dc arc plasma jet chemical vapor deposition. There were micrometer-sized columnar diamond crystalline grains in both upper layer and lower layer. The size of the columnar diamond crystalline grains was bigger in the upper layer than that in the lower layer. The orientation of the upper layer was (110), while it was (111) for the lower layer. Raman results showed that no sp{sup 3} peak shift was found in the upper layer, but it was found and blueshifted in the lower layer. This indicated that the internal stress within the film body could be tailored by this layered structure. The buffer layer with nanometer-sized diamond grains formed by secondary nucleation was necessary in order to form the layered film. Growth rate was over 10 {mu}m/h in layered self-standing diamond film fabrication.

Authors:
; ; ; ; ; ;  [1]
  1. School of Material Science and Engineering, University Science and Technology, Beijing, Beijing 10083 (China)
Publication Date:
OSTI Identifier:
20853954
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 1; Other Information: DOI: 10.1116/1.2409940; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DIAMONDS; EPITAXY; FABRICATION; FILMS; HYDROGEN; LAYERS; METHANE; NUCLEATION; PLASMA JETS; SEMICONDUCTOR MATERIALS; STRESSES

Citation Formats

Chen, G. C., Dai, F. W., Li, B., Lan, H., Askari, J., Tang, W. Z., and Lu, F. X. Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition. United States: N. p., 2007. Web. doi:10.1116/1.2409940.
Chen, G. C., Dai, F. W., Li, B., Lan, H., Askari, J., Tang, W. Z., & Lu, F. X. Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition. United States. doi:10.1116/1.2409940.
Chen, G. C., Dai, F. W., Li, B., Lan, H., Askari, J., Tang, W. Z., and Lu, F. X. Mon . "Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition". United States. doi:10.1116/1.2409940.
@article{osti_20853954,
title = {Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition},
author = {Chen, G. C. and Dai, F. W. and Li, B. and Lan, H. and Askari, J. and Tang, W. Z. and Lu, F. X.},
abstractNote = {Layered self-standing diamond films, consisting of an upper layer, buffer layer, and a lower layer, were fabricated by fluctuating the ratio of methane to hydrogen in high power dc arc plasma jet chemical vapor deposition. There were micrometer-sized columnar diamond crystalline grains in both upper layer and lower layer. The size of the columnar diamond crystalline grains was bigger in the upper layer than that in the lower layer. The orientation of the upper layer was (110), while it was (111) for the lower layer. Raman results showed that no sp{sup 3} peak shift was found in the upper layer, but it was found and blueshifted in the lower layer. This indicated that the internal stress within the film body could be tailored by this layered structure. The buffer layer with nanometer-sized diamond grains formed by secondary nucleation was necessary in order to form the layered film. Growth rate was over 10 {mu}m/h in layered self-standing diamond film fabrication.},
doi = {10.1116/1.2409940},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 1,
volume = 25,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}