skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering

Abstract

Silicon oxycarbide glasses have been of interest because of the potential range of properties they might exhibit through a change in carbon-to-oxygen ratio. They are metastable materials and, as such, their structures and properties are very dependent upon the synthesis method. Silicon oxycarbide bonding has been seen in materials made by melting, oxidation, polycarbosilane or sol/gel pyrolysis, and chemical vapor deposition. In this work, the radio-frequency reactive sputtering of silicon carbide targets was explored for synthesis of amorphous silicon oxycarbide thin films. SiO{sub (2-2x)}C{sub x} films, with a continuous range of compositions where 0{<=}x{<=}1, were deposited by controlling the amount of oxygen present in the plasma with a SiC target. This resulted in a density range from 1.9 to 2.8 g/cm{sup 3} and a range of refractive indexes from 1.35 to 2.85. Analysis of the film compositions, structures, and properties were performed using x-ray photoelectron spectroscopy, infrared spectroscopy, nuclear magnetic resonance, profilometry, electron microscopy, grazing incidence x-ray reflectivity, and UV-visible transmission and reflection. The compositional range obtainable by this rf sputtering method is much wider than that of other synthesis methods. It is shown here that for oxygen-to-carbon ratios between {approx}0.10 and 10.0, silicon oxycarbide bonding comprises 55%-95% of themore » material structure. These sputter-deposited materials were also found to have significantly less free carbon as compared to those produced by other methods. Thus, the unique properties for these novel oxycarbide materials can now be established.« less

Authors:
;  [1]
  1. Department of Materials Science and Engineering, Materials Research Institute, 103 MRI Building, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
20853943
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 1; Other Information: DOI: 10.1116/1.2404688; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRON MICROSCOPY; GLASS; INFRARED SPECTRA; MAGNETRONS; NUCLEAR MAGNETIC RESONANCE; OXYGEN; PYROLYSIS; RADIOWAVE RADIATION; REFLECTIVITY; REFRACTIVE INDEX; SILICON; SPUTTERING; SYNTHESIS; THIN FILMS; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Ryan, Joseph V., and Pantano, C. G. Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering. United States: N. p., 2007. Web. doi:10.1116/1.2404688.
Ryan, Joseph V., & Pantano, C. G. Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering. United States. doi:10.1116/1.2404688.
Ryan, Joseph V., and Pantano, C. G. Mon . "Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering". United States. doi:10.1116/1.2404688.
@article{osti_20853943,
title = {Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering},
author = {Ryan, Joseph V. and Pantano, C. G.},
abstractNote = {Silicon oxycarbide glasses have been of interest because of the potential range of properties they might exhibit through a change in carbon-to-oxygen ratio. They are metastable materials and, as such, their structures and properties are very dependent upon the synthesis method. Silicon oxycarbide bonding has been seen in materials made by melting, oxidation, polycarbosilane or sol/gel pyrolysis, and chemical vapor deposition. In this work, the radio-frequency reactive sputtering of silicon carbide targets was explored for synthesis of amorphous silicon oxycarbide thin films. SiO{sub (2-2x)}C{sub x} films, with a continuous range of compositions where 0{<=}x{<=}1, were deposited by controlling the amount of oxygen present in the plasma with a SiC target. This resulted in a density range from 1.9 to 2.8 g/cm{sup 3} and a range of refractive indexes from 1.35 to 2.85. Analysis of the film compositions, structures, and properties were performed using x-ray photoelectron spectroscopy, infrared spectroscopy, nuclear magnetic resonance, profilometry, electron microscopy, grazing incidence x-ray reflectivity, and UV-visible transmission and reflection. The compositional range obtainable by this rf sputtering method is much wider than that of other synthesis methods. It is shown here that for oxygen-to-carbon ratios between {approx}0.10 and 10.0, silicon oxycarbide bonding comprises 55%-95% of the material structure. These sputter-deposited materials were also found to have significantly less free carbon as compared to those produced by other methods. Thus, the unique properties for these novel oxycarbide materials can now be established.},
doi = {10.1116/1.2404688},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 1,
volume = 25,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}