Relaxation properties of rare-earth ions in sulfide glasses: Experiment and theory
- Laboratoire de Phisico-Chimie des Materiaux Luminescents, UMR-CNRS 5620, Universite de Lyon 1, Domaine Scientifique de la Doua, 69622 Villeurbane Cedex (France)
- Center for Photon Information Processing and Graduate School of Information and Communications, Inha University, Incheon 402-751 (Korea, Republic of)
- Laboratoire des Verres et Ceramiques, UMR-CNRS 6512, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France)
Both radiative and nonradiative relaxation rates for a series of rare-earth ions doped 20Ge-5Ga-10Sb-65S (GeGaSbS) sulfide (chalcogenide) glasses have been determined. Temperature-dependent lifetimes were carried out for various excited levels of the sample. Radiative decay rates were derived by using the Judd-Ofelt approach. Nonradiative decay rates are evaluated by comparing the inversion of measured lifetimes with the calculated radiative decay rates. We have found that the multiphonon relaxation rates should be a predominant decay mechanism among the excited states if the energy gap to the next lower level is smaller than 2500 cm{sup -1}, and the decay mechanism can be determined using the semiempirical ''energy-gap law.'' For an energy gap larger than 2500 cm{sup -1}, additional nonradiative decay processes become dominant over the multiphonon decay. Additional nonradiative decay processes have been quantitatively identified with the diffusion-limited relaxation calculations.
- OSTI ID:
- 20853868
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 74, Issue 18; Other Information: DOI: 10.1103/PhysRevB.74.184103; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY SULFIDES
DIFFUSION
DOPED MATERIALS
DYSPROSIUM IONS
ENERGY GAP
ERBIUM IONS
EXCITED STATES
GALLIUM SULFIDES
GERMANIUM SULFIDES
HOLMIUM IONS
INFRARED SPECTRA
LIFETIME
LUMINESCENCE
PHONONS
RADIATIVE DECAY
RELAXATION
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE