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Title: Characterization of fluorine-modified organosilicate glass

Abstract

In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS/O{sub 2}/SiF{sub 4} mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.

Authors:
; ; ; ;  [1]
  1. Department of Applied Physics, National Chia Yi University, Chia Yi, Taiwan (China)
Publication Date:
OSTI Identifier:
20853795
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Volume: 24; Journal Issue: 6; Other Information: DOI: 10.1116/1.2348644; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; DESORPTION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FLUORINE; FOURIER TRANSFORMATION; GLASS; INFRARED SPECTRA; LEAKAGE CURRENT; MIXTURES; PLASMA; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Liu, C -W, Wang, Y -L, Juang, Yungder, Jang Jean, Shiuh-Ko, Lee, W -H, Department of Material Science, National University of Tainan, Tainan, Taiwan, Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan, and Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan. Characterization of fluorine-modified organosilicate glass. United States: N. p., 2006. Web. doi:10.1116/1.2348644.
Liu, C -W, Wang, Y -L, Juang, Yungder, Jang Jean, Shiuh-Ko, Lee, W -H, Department of Material Science, National University of Tainan, Tainan, Taiwan, Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan, & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan. Characterization of fluorine-modified organosilicate glass. United States. https://doi.org/10.1116/1.2348644
Liu, C -W, Wang, Y -L, Juang, Yungder, Jang Jean, Shiuh-Ko, Lee, W -H, Department of Material Science, National University of Tainan, Tainan, Taiwan, Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan, and Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan. 2006. "Characterization of fluorine-modified organosilicate glass". United States. https://doi.org/10.1116/1.2348644.
@article{osti_20853795,
title = {Characterization of fluorine-modified organosilicate glass},
author = {Liu, C -W and Wang, Y -L and Juang, Yungder and Jang Jean, Shiuh-Ko and Lee, W -H and Department of Material Science, National University of Tainan, Tainan, Taiwan and Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan and Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan},
abstractNote = {In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS/O{sub 2}/SiF{sub 4} mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.},
doi = {10.1116/1.2348644},
url = {https://www.osti.gov/biblio/20853795}, journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
issn = {1553-1813},
number = 6,
volume = 24,
place = {United States},
year = {Wed Nov 15 00:00:00 EST 2006},
month = {Wed Nov 15 00:00:00 EST 2006}
}