Effect of a wide band gap emitter layer and its patterning on the performance of a-Si:H based heterojunction solar cells
- Indian Association for the Cultivation of Science, Calcutta (India)
Simulation of carrier transport in heterojunction p-i-n structure solar cells has been used to study the effect of a wide band gap p-layer and its contact barrier height (CBH) on cell performance. The authors find that the recombination loss at the front contact is small when the emitter layer has a wider band gap. Thus the short circuit current in these structures is high and practically independent of CBH. However, if CHB is held constant, the effect of increasing the p-layer band gap is actually to depress the open circuit voltage (V{sub oc}). The performance of heterojunction cells deposited on ITO can then only be explained by assuming a larger CHB. A novel patterning of the p-a-Si-C:H layer has been explored and found to increase V{sub oc} by 0.1 volts and the efficiency by over 10%.
- OSTI ID:
- 208135
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%463
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Experimental determination of band offsets of NiO-based thin film heterojunctions
Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells