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Title: X-Ray Microdiffraction as a Probe to Reveal Flux Divergences in Interconnects

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2173561· OSTI ID:20798189
 [1];  [2];  [2]
  1. Lab. for Nanometallurgy, Dept. of Materials, ETH Zurich, 8093 Zurich (Switzerland)
  2. Advanced Light Source, Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

Most reliability issues in interconnect systems occur at a local scale and many of them include the local build-up of stresses. Typical failure mechanisms are electromigration and stress voiding in interconnect lines and fatigue in surface acoustic wave devices. Thus a local probe is required for the investigation of these phenomena. In this paper the application of the Laue microdiffraction technique to investigate flux divergences in interconnect systems will be described. The deviatoric strain tensor of single grains can be correlated with the local microstructure, orientation and defect density. Especially the latter led to recent results about the correlation of stress build-up and orientation in Cu lines and electromigration-induced grain rotation in Cu and Al lines.

OSTI ID:
20798189
Journal Information:
AIP Conference Proceedings, Vol. 817, Issue 1; Conference: 8. international workshop on stress-induced phenomena in metallization, Dresden (Germany), 12-14 Sep 2005; Other Information: DOI: 10.1063/1.2173561; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English