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Title: Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector

Abstract

GaAsSbN layers closely lattice-matched to GaAs were studied for application as the intrinsic layer in GaAs-based 1.3 {mu}m p-i-n photodetector. The GaAsSbN was grown as the intrinsic layer for the GaAs/GaAsSbN/GaAs photodetector structure using solid-source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and valved antimony cracker source. The lattice mismatch of the GaAsSbN layer to GaAs was kept below 4000 ppm, which is sufficient to maintain coherent growth of {approx}0.45 {mu}m thick GaAsSbN on the GaAs substrate. The growth temperature of the GaAsSbN layer was varied from 420-480 deg. C. All samples exhibit room temperature photocurrent response in the 1.3 {mu}m wavelength region, with dark current density of {approx}0.3-0.5 mA/cm{sup 2} and responsivity of up to 33 mA/W at 2 V reverse bias. Reciprocal space maps reveal traces of point defects and segregation (clustering) of N and Sb, which may have a detrimental effect on the photocurrent responsivity.

Authors:
; ; ; ;  [1];  [2];  [3]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  2. (Singapore) and Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  3. (Singapore)
Publication Date:
OSTI Identifier:
20795816
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 10; Other Information: DOI: 10.1063/1.2195022; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CRYSTAL GROWTH; CURRENT DENSITY; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOCONDUCTIVITY; PHOTODETECTORS; PLASMA; POINT DEFECTS; SEGREGATION; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS

Citation Formats

Wicaksono, S., Yoon, S.F., Loke, W.K., Tan, K.H., Ng, B.K., School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798. Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector. United States: N. p., 2006. Web. doi:10.1063/1.2195022.
Wicaksono, S., Yoon, S.F., Loke, W.K., Tan, K.H., Ng, B.K., School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, & School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798. Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector. United States. doi:10.1063/1.2195022.
Wicaksono, S., Yoon, S.F., Loke, W.K., Tan, K.H., Ng, B.K., School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798. Mon . "Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector". United States. doi:10.1063/1.2195022.
@article{osti_20795816,
title = {Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector},
author = {Wicaksono, S. and Yoon, S.F. and Loke, W.K. and Tan, K.H. and Ng, B.K. and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798},
abstractNote = {GaAsSbN layers closely lattice-matched to GaAs were studied for application as the intrinsic layer in GaAs-based 1.3 {mu}m p-i-n photodetector. The GaAsSbN was grown as the intrinsic layer for the GaAs/GaAsSbN/GaAs photodetector structure using solid-source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and valved antimony cracker source. The lattice mismatch of the GaAsSbN layer to GaAs was kept below 4000 ppm, which is sufficient to maintain coherent growth of {approx}0.45 {mu}m thick GaAsSbN on the GaAs substrate. The growth temperature of the GaAsSbN layer was varied from 420-480 deg. C. All samples exhibit room temperature photocurrent response in the 1.3 {mu}m wavelength region, with dark current density of {approx}0.3-0.5 mA/cm{sup 2} and responsivity of up to 33 mA/W at 2 V reverse bias. Reciprocal space maps reveal traces of point defects and segregation (clustering) of N and Sb, which may have a detrimental effect on the photocurrent responsivity.},
doi = {10.1063/1.2195022},
journal = {Journal of Applied Physics},
number = 10,
volume = 99,
place = {United States},
year = {Mon May 15 00:00:00 EDT 2006},
month = {Mon May 15 00:00:00 EDT 2006}
}
  • The growth of the InAs(N) quantum dots on GaAs in a reduced-pressure reactor of metal-organic chemical vapor deposition (MOCVD) is studied. As the nitrogen source, dimethylhydrazine is used. It is currently well-known that the growth temperature of the InGaAs quantum dots should be limited in order to avoid undesirable In and Ga interdiffusion as well as reevaporation of In. However, thick GaAs barrier layers should be grown at the elevated temperature because of the pronounced effect of the growth temperature on the optical quality of the structure. An increase in the temperature of the substrate holder by 100 deg. Cmore » requires interrupting the process in the MOCVD reactor for approximately 2 min. The time of this interruption for the temperature rise can come at various stages of the process, namely, (i) after growing the quantum dots and prior to growing the InGaAs coating layer, (ii) during the growth of the coating layer, (iii) after growing the coating layer and before growing the GaAs barrier layer, and (iv) during the growth of the GaAs barrier layer. It is shown that the last variant is the most appropriate for the structures with intense photoluminescence at 1.3 {mu}m. In this case, the thin initial part of the barrier layer is grown under reduced temperature.« less
  • The structural, optical, and vibrational properties of a GaAsSbN epilayer lattice matched to GaAs with a band gap of 1 eV have been investigated using a variety of characterization techniques. These layers have potential applications in GaAs based tandem solar cells that utilize the near infrared region of the solar spectrum. The epilayers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma nitrogen source. The Sb and N compositions of the nearly lattice-matched layers are 6.8% and 2.6%, respectively, as determined by high resolution x-ray diffraction and secondary ion mass spectroscopy (SIMS) analysis. Themore » high crystalline quality of the layers is attested by the presence of well resolved Pendellosung fringes on a triple axis (004) x-ray scan and dynamical truncation rods observed on the corresponding (004) reciprocal space map. The effects of in situ annealing in As ambient and ex situ annealing in N ambient on the low temperature photoluminescence (PL) characteristics are discussed. Ex situ (in situ) annealed samples display an 8 K PL peak energy of 1 eV with a full width at half maximum of 18 meV (26 meV). Raman spectral analysis, the temperature dependence of the PL peak energy, and SIMS profiles indicate that outdiffusions of N and As are suppressed in the in situ annealed samples and improvement in Ga-N bonding is observed, leading to higher PL intensities in these samples. In addition, indirect evidence of atomic scale ordering has been observed. The stability of these structures appears to be dependent on the annealing conditions.« less
  • A 1.55 {mu}m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 deg. C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 {mu}m. The dark current densities are 1.28x10{sup -7} A/cm{sup 2} at the bias of 0 V and 3.5x10{sup -5} A/cm{sup 2} at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime inmore » LT-GaAs is 220 fs.« less
  • We have grown bulk GaAsN and InGaAsN quantum well laser structures using molecular beam epitaxy and an electron cyclotron resonance plasma source with N{sub 2} gas. X-ray diffraction measurements in GaAsN grown on GaAs were used to determine the concentration of N in the range of 0{percent} to {approximately}2{percent}. Room temperature photoluminescence (PL) measurements were done on quantum well test structures and half lasers. The PL intensity decreases and the PL full width at half maximum (FWHM) increases as the wavelength increases. Rapid thermal annealing (RTA) at 850&hthinsp;{degree}C for 10 s improves the PL intensity by a factor of 8more » and increases the PL peak emission energy by 80 meV. The longest wavelength measured to date in laser structures with single quantum wells of InGaAsN is 1480 nm with a FWHM of 60 meV. Samples with and without RTA were fabricated into broad-area lasers with dimensions of 50{times}500&hthinsp;{mu}m{sup 2}. Laser devices with RTA operated in the pulsed mode at 1.3 {mu}m with a threshold current density of 9.5 kA/cm{sup 2}. {copyright} {ital 1999 American Vacuum Society.}« less
  • The interdiffusion of Ga{sub x}In{sub 1{minus}x}N{sub 0.04}As{sub 0.96}/GaAs single quantum well (QW) structure with well width of 6 nm is studied theoretically. The as-grown Ga concentration in the QW is chosen to be 0.7 and 0.6 for the operation wavelengths of 1.3 and 1.55 {mu}m, respectively. We studied the effects of interdiffusion on the in-plane strain, confinement potential, and subband energy levels of the QW using Fick{close_quote}s law. The diffusion coefficients of both the well and barrier layers are assumed to be constant. The effects of valence band mixing and strains are included in the calculation of the electron andmore » hole subband structures. We find that the group-III interdiffusion effects can result in blueshifts of 123 and 211 nm in the Ga{sub x}In{sub 1{minus}x}N{sub 0.04}As{sub 0.96}/GaAs QW at operation wavelength of 1.3 {mu}m (x=0.7) and 1.55 {mu}m (x=0.6), respectively. Our results show that interdiffusion technique can be used to tune the operating wavelengths of GaInAsN/GaAs lasers for multiwavelength applications such as in the sources of dense wavelength division multiplexed optical communication systems. {copyright} 2001 American Institute of Physics.« less