skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector

Abstract

GaAsSbN layers closely lattice-matched to GaAs were studied for application as the intrinsic layer in GaAs-based 1.3 {mu}m p-i-n photodetector. The GaAsSbN was grown as the intrinsic layer for the GaAs/GaAsSbN/GaAs photodetector structure using solid-source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and valved antimony cracker source. The lattice mismatch of the GaAsSbN layer to GaAs was kept below 4000 ppm, which is sufficient to maintain coherent growth of {approx}0.45 {mu}m thick GaAsSbN on the GaAs substrate. The growth temperature of the GaAsSbN layer was varied from 420-480 deg. C. All samples exhibit room temperature photocurrent response in the 1.3 {mu}m wavelength region, with dark current density of {approx}0.3-0.5 mA/cm{sup 2} and responsivity of up to 33 mA/W at 2 V reverse bias. Reciprocal space maps reveal traces of point defects and segregation (clustering) of N and Sb, which may have a detrimental effect on the photocurrent responsivity.

Authors:
; ; ; ;  [1];  [2];  [3]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  2. (Singapore) and Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  3. (Singapore)
Publication Date:
OSTI Identifier:
20795816
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 10; Other Information: DOI: 10.1063/1.2195022; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CRYSTAL GROWTH; CURRENT DENSITY; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOCONDUCTIVITY; PHOTODETECTORS; PLASMA; POINT DEFECTS; SEGREGATION; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS

Citation Formats

Wicaksono, S., Yoon, S.F., Loke, W.K., Tan, K.H., Ng, B.K., School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798. Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector. United States: N. p., 2006. Web. doi:10.1063/1.2195022.
Wicaksono, S., Yoon, S.F., Loke, W.K., Tan, K.H., Ng, B.K., School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, & School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798. Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector. United States. doi:10.1063/1.2195022.
Wicaksono, S., Yoon, S.F., Loke, W.K., Tan, K.H., Ng, B.K., School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798. Mon . "Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector". United States. doi:10.1063/1.2195022.
@article{osti_20795816,
title = {Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector},
author = {Wicaksono, S. and Yoon, S.F. and Loke, W.K. and Tan, K.H. and Ng, B.K. and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 and School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798},
abstractNote = {GaAsSbN layers closely lattice-matched to GaAs were studied for application as the intrinsic layer in GaAs-based 1.3 {mu}m p-i-n photodetector. The GaAsSbN was grown as the intrinsic layer for the GaAs/GaAsSbN/GaAs photodetector structure using solid-source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and valved antimony cracker source. The lattice mismatch of the GaAsSbN layer to GaAs was kept below 4000 ppm, which is sufficient to maintain coherent growth of {approx}0.45 {mu}m thick GaAsSbN on the GaAs substrate. The growth temperature of the GaAsSbN layer was varied from 420-480 deg. C. All samples exhibit room temperature photocurrent response in the 1.3 {mu}m wavelength region, with dark current density of {approx}0.3-0.5 mA/cm{sup 2} and responsivity of up to 33 mA/W at 2 V reverse bias. Reciprocal space maps reveal traces of point defects and segregation (clustering) of N and Sb, which may have a detrimental effect on the photocurrent responsivity.},
doi = {10.1063/1.2195022},
journal = {Journal of Applied Physics},
number = 10,
volume = 99,
place = {United States},
year = {Mon May 15 00:00:00 EDT 2006},
month = {Mon May 15 00:00:00 EDT 2006}
}