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Title: Magnetic properties of Fe films and Fe/Si/Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Abstract

We grow monocrystalline Fe(001) films and Fe/Si/Fe(001) trilayers by ion-beam sputter epitaxy on GaAs(001) and MgO(001) substrates. Ion-beam sputtering parameters such as substrate presputtering time, substrate temperature, beam voltage, and target angle are optimized for 10-nm-thick Fe(001) films with respect to epitaxial growth and magnetic properties. In situ low-energy electron diffraction patterns confirm the epitaxial and monocrystalline nature of the sputtered films, surprisingly even on untreated and thus oxidized substrates. The magneto-optical Kerr effect and ferromagnetic resonance are employed to investigate the magnetic properties, and the structural properties are characterized by atomic force microscopy and x-ray reflectivity measurements. Using the optimized set of parameters that yields the best magnetic properties for single Fe films on GaAs, we deposit epitaxial Fe/Si/Fe(001) structures and observe antiferromagnetic interlayer exchange coupling for epitaxially sputtered Fe/Si/Fe(001) trilayers on GaAs(001). The total coupling strength reaches values of up to 2 mJ/m{sup 2} at a Si thickness of 15 A.

Authors:
; ; ; ; ;  [1]
  1. Institut fuer Festkoerperfoschung, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany) and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)
Publication Date:
OSTI Identifier:
20795803
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 99; Journal Issue: 9; Other Information: DOI: 10.1063/1.2197034; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIFERROMAGNETIC MATERIALS; ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRON DIFFRACTION; ELECTRONS; EPITAXY; EXCHANGE INTERACTIONS; FERROMAGNETIC MATERIALS; FERROMAGNETIC RESONANCE; GALLIUM ARSENIDES; ION BEAMS; IRON; KERR EFFECT; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; MAGNETO-OPTICAL EFFECTS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS

Citation Formats

Damm, Thorsten, Buchmeier, Matthias, Schindler, Alexandra, Buergler, Daniel E, Gruenberg, Peter, and Schneider, Claus M. Magnetic properties of Fe films and Fe/Si/Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy. United States: N. p., 2006. Web. doi:10.1063/1.2197034.
Damm, Thorsten, Buchmeier, Matthias, Schindler, Alexandra, Buergler, Daniel E, Gruenberg, Peter, & Schneider, Claus M. Magnetic properties of Fe films and Fe/Si/Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy. United States. https://doi.org/10.1063/1.2197034
Damm, Thorsten, Buchmeier, Matthias, Schindler, Alexandra, Buergler, Daniel E, Gruenberg, Peter, and Schneider, Claus M. 2006. "Magnetic properties of Fe films and Fe/Si/Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy". United States. https://doi.org/10.1063/1.2197034.
@article{osti_20795803,
title = {Magnetic properties of Fe films and Fe/Si/Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy},
author = {Damm, Thorsten and Buchmeier, Matthias and Schindler, Alexandra and Buergler, Daniel E and Gruenberg, Peter and Schneider, Claus M},
abstractNote = {We grow monocrystalline Fe(001) films and Fe/Si/Fe(001) trilayers by ion-beam sputter epitaxy on GaAs(001) and MgO(001) substrates. Ion-beam sputtering parameters such as substrate presputtering time, substrate temperature, beam voltage, and target angle are optimized for 10-nm-thick Fe(001) films with respect to epitaxial growth and magnetic properties. In situ low-energy electron diffraction patterns confirm the epitaxial and monocrystalline nature of the sputtered films, surprisingly even on untreated and thus oxidized substrates. The magneto-optical Kerr effect and ferromagnetic resonance are employed to investigate the magnetic properties, and the structural properties are characterized by atomic force microscopy and x-ray reflectivity measurements. Using the optimized set of parameters that yields the best magnetic properties for single Fe films on GaAs, we deposit epitaxial Fe/Si/Fe(001) structures and observe antiferromagnetic interlayer exchange coupling for epitaxially sputtered Fe/Si/Fe(001) trilayers on GaAs(001). The total coupling strength reaches values of up to 2 mJ/m{sup 2} at a Si thickness of 15 A.},
doi = {10.1063/1.2197034},
url = {https://www.osti.gov/biblio/20795803}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 99,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}