Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature

Journal Article · Mon May 01 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2198934· OSTI ID:20795800

Ruijin, Hong; Jianda, Shao; Hongbo, He; Zhengxiu, Fan ^[1]

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1. Research and Development Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China) and Graduate School of Chinese Academy of Sciences, Beijing 100864 (China)

ZnO/ITO/ZnO sandwich structure films were fabricated. The effects of buffer layer on the structure and optical properties of ZnO films were investigated by x-ray diffraction (XRD), photoluminescence, optical transmittance, and absorption measurements. XRD spectra indicate that a buffer layer has the effects of lowering the grain orientation of ZnO films and increasing the residual stresses in the films. The near-band-edge emissions of ZnO films deposited on both single indium tin oxide (ITO) buffer and ITO/ZnO double buffers are significantly enhanced compared with that deposited on a bare substrate due to the quantum confinement effect.

• OSTI ID: 20795800
• Journal Information: Journal of Applied Physics, Vol. 99, Issue 9; Other Information: DOI: 10.1063/1.2198934; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CRYSTAL STRUCTURE
GRAIN ORIENTATION
INDIUM COMPOUNDS
LAYERS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TIN OXIDES
VACUUM COATING
X-RAY DIFFRACTION
ZINC OXIDES