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Title: Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface

Abstract

We studied the conditions for the Stranski-Krastanov mode of molecular beam epitaxial growth of InAs on a cleaved GaAs(110) surface. Temperature distributions on a subholder with cleaved facets were revealed using thermophotography. Combining these data with a theoretical model enabled a determination of the real temperature on the cleaved-edge surfaces (110), which differed markedly from the temperature on a planar wafer (100). Based on these results, we proposed an approach that combines different growth conditions in one technological process. As a result, appropriate growth conditions were established for InAs quantum dots grown on the cleaved GaAs(110) surface. Control over the dot nucleation process was shown to permit growth of both linear arrays of quantum dots and planar quantum wires on these (110) surfaces.

Authors:
; ; ; ;  [1]
  1. Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto M53 3E4 (Canada)
Publication Date:
OSTI Identifier:
20795799
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 9; Other Information: DOI: 10.1063/1.2197027; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NUCLEATION; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SURFACES; TEMPERATURE DISTRIBUTION

Citation Formats

Blumin, M., Ruda, H.E., Savelyev, I. G., Shik, A., and Wang, H.. Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface. United States: N. p., 2006. Web. doi:10.1063/1.2197027.
Blumin, M., Ruda, H.E., Savelyev, I. G., Shik, A., & Wang, H.. Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface. United States. doi:10.1063/1.2197027.
Blumin, M., Ruda, H.E., Savelyev, I. G., Shik, A., and Wang, H.. Mon . "Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface". United States. doi:10.1063/1.2197027.
@article{osti_20795799,
title = {Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface},
author = {Blumin, M. and Ruda, H.E. and Savelyev, I. G. and Shik, A. and Wang, H.},
abstractNote = {We studied the conditions for the Stranski-Krastanov mode of molecular beam epitaxial growth of InAs on a cleaved GaAs(110) surface. Temperature distributions on a subholder with cleaved facets were revealed using thermophotography. Combining these data with a theoretical model enabled a determination of the real temperature on the cleaved-edge surfaces (110), which differed markedly from the temperature on a planar wafer (100). Based on these results, we proposed an approach that combines different growth conditions in one technological process. As a result, appropriate growth conditions were established for InAs quantum dots grown on the cleaved GaAs(110) surface. Control over the dot nucleation process was shown to permit growth of both linear arrays of quantum dots and planar quantum wires on these (110) surfaces.},
doi = {10.1063/1.2197027},
journal = {Journal of Applied Physics},
number = 9,
volume = 99,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}