skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The evolution of microstructure and photoluminescence of SiCN films with annealing temperature

Abstract

Silicon carbonitride (SiCN) films were deposited by radio-frequency magnetron sputtering and then annealed at different temperatures from 1100 to 1300 deg. C in hydrogen atmosphere. The as-deposited films and films annealed at 1100 deg. C did not show photoluminescence (PL), whereas strong PL peaks appeared at 355 and 469 nm after annealing at 1200 and 1300 deg. C. X-ray diffraction, transmission electron microscope, and Fourier transform infrared spectrometer results show that the enhancement of PL properties is due to the change of microstructure and composition.

Authors:
; ; ;  [1];  [2]
  1. School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)
  2. (China)
Publication Date:
OSTI Identifier:
20795792
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 9; Other Information: DOI: 10.1063/1.2194208; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL STRUCTURE; FILMS; FOURIER TRANSFORM SPECTROMETERS; HYDROGEN; INFRARED SPECTROMETERS; MICROSTRUCTURE; PHOTOLUMINESCENCE; RADIOWAVE RADIATION; SILICON; SILICON COMPOUNDS; SPUTTERING; SURFACE COATING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Du Xiwen, Fu Yang, Sun Jing, Yao Pei, and Analysis Centre, Tianjin University, Tianjin 300072. The evolution of microstructure and photoluminescence of SiCN films with annealing temperature. United States: N. p., 2006. Web. doi:10.1063/1.2194208.
Du Xiwen, Fu Yang, Sun Jing, Yao Pei, & Analysis Centre, Tianjin University, Tianjin 300072. The evolution of microstructure and photoluminescence of SiCN films with annealing temperature. United States. doi:10.1063/1.2194208.
Du Xiwen, Fu Yang, Sun Jing, Yao Pei, and Analysis Centre, Tianjin University, Tianjin 300072. Mon . "The evolution of microstructure and photoluminescence of SiCN films with annealing temperature". United States. doi:10.1063/1.2194208.
@article{osti_20795792,
title = {The evolution of microstructure and photoluminescence of SiCN films with annealing temperature},
author = {Du Xiwen and Fu Yang and Sun Jing and Yao Pei and Analysis Centre, Tianjin University, Tianjin 300072},
abstractNote = {Silicon carbonitride (SiCN) films were deposited by radio-frequency magnetron sputtering and then annealed at different temperatures from 1100 to 1300 deg. C in hydrogen atmosphere. The as-deposited films and films annealed at 1100 deg. C did not show photoluminescence (PL), whereas strong PL peaks appeared at 355 and 469 nm after annealing at 1200 and 1300 deg. C. X-ray diffraction, transmission electron microscope, and Fourier transform infrared spectrometer results show that the enhancement of PL properties is due to the change of microstructure and composition.},
doi = {10.1063/1.2194208},
journal = {Journal of Applied Physics},
number = 9,
volume = 99,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}