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Title: Swift heavy ion irradiation of InP: Thermal spike modeling of track formation

Abstract

Irradiation of single-crystalline InP with swift heavy ions (SHI's) causes the formation of ion tracks for certain irradiation temperatures if the electronic energy deposition exceeds a threshold value. With increasing SHI fluence, more and more ion tracks are formed, until a continuous amorphous layer is produced due to the multiple overlapping of the tracks at high ion fluences. Single-crystalline InP samples were irradiated either at liquid nitrogen temperature (LNT) or at room temperature (RT) with Kr, Xe, or Au ions with specific energies ranging from ca. 0.3 to 3.0 MeV/u. Afterwards, the samples were investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy in the plan-view and cross-section geometry. We show that the experimental data obtained can be qualitatively and quantitatively described on the basis of the inelastic thermal spike (TS) model, which was originally used only for metallic targets. The presented extension of the TS model on semiconductors covers mainly the very first stage of the energy transfer from SHI's (so-called 'ionization spikes'). Our results show that the extended TS model offers a self-consistent way to explain the influence of various irradiation conditions (ion mass, ion energy, irradiation temperature, etc.) on the ion track formation and damagemore » accumulation in InP and, therefore, can make a contribution to a better understanding of the underlying mechanisms. Further, our results prejudice the amenity of a single value of the threshold electronic energy loss as a fundamental quantity that is commonly used for the description of track formation in solids irradiated with different ion species. There is no universal RT threshold for track formation in InP, but it is noticeably higher for lighter ions (12.0 and 14.8 keV/nm for RT irradiations with Au and Xe, respectively). Our experimental and simulation results support the idea that the formation of visible tracks requires a predamaging of the material, unless each SHI penetrating perfectly ordered virgin InP directly produces a track that is large enough to be stable.« less

Authors:
; ;  [1]; ;  [2]
  1. Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)
  2. Institut fuer Materialwissenschaft und Werkstofftechnologie, Friedrich-Schiller-Universitaet Jena, Loebdergraben 32, D-07743 Jena (Germany)
Publication Date:
OSTI Identifier:
20788169
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 73; Journal Issue: 18; Other Information: DOI: 10.1103/PhysRevB.73.184107; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; GOLD IONS; HEAVY IONS; INDIUM PHOSPHIDES; ION BEAMS; IRRADIATION; KEV RANGE; KRYPTON IONS; MEV RANGE; MONOCRYSTALS; PARTICLE TRACKS; PHYSICAL RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SIMULATION; THERMAL SPIKES; TRANSMISSION ELECTRON MICROSCOPY; XENON IONS

Citation Formats

Kamarou, A., Wesch, W., Wendler, E., Undisz, A., and Rettenmayr, M.. Swift heavy ion irradiation of InP: Thermal spike modeling of track formation. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.73.1.
Kamarou, A., Wesch, W., Wendler, E., Undisz, A., & Rettenmayr, M.. Swift heavy ion irradiation of InP: Thermal spike modeling of track formation. United States. doi:10.1103/PHYSREVB.73.1.
Kamarou, A., Wesch, W., Wendler, E., Undisz, A., and Rettenmayr, M.. Mon . "Swift heavy ion irradiation of InP: Thermal spike modeling of track formation". United States. doi:10.1103/PHYSREVB.73.1.
@article{osti_20788169,
title = {Swift heavy ion irradiation of InP: Thermal spike modeling of track formation},
author = {Kamarou, A. and Wesch, W. and Wendler, E. and Undisz, A. and Rettenmayr, M.},
abstractNote = {Irradiation of single-crystalline InP with swift heavy ions (SHI's) causes the formation of ion tracks for certain irradiation temperatures if the electronic energy deposition exceeds a threshold value. With increasing SHI fluence, more and more ion tracks are formed, until a continuous amorphous layer is produced due to the multiple overlapping of the tracks at high ion fluences. Single-crystalline InP samples were irradiated either at liquid nitrogen temperature (LNT) or at room temperature (RT) with Kr, Xe, or Au ions with specific energies ranging from ca. 0.3 to 3.0 MeV/u. Afterwards, the samples were investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy in the plan-view and cross-section geometry. We show that the experimental data obtained can be qualitatively and quantitatively described on the basis of the inelastic thermal spike (TS) model, which was originally used only for metallic targets. The presented extension of the TS model on semiconductors covers mainly the very first stage of the energy transfer from SHI's (so-called 'ionization spikes'). Our results show that the extended TS model offers a self-consistent way to explain the influence of various irradiation conditions (ion mass, ion energy, irradiation temperature, etc.) on the ion track formation and damage accumulation in InP and, therefore, can make a contribution to a better understanding of the underlying mechanisms. Further, our results prejudice the amenity of a single value of the threshold electronic energy loss as a fundamental quantity that is commonly used for the description of track formation in solids irradiated with different ion species. There is no universal RT threshold for track formation in InP, but it is noticeably higher for lighter ions (12.0 and 14.8 keV/nm for RT irradiations with Au and Xe, respectively). Our experimental and simulation results support the idea that the formation of visible tracks requires a predamaging of the material, unless each SHI penetrating perfectly ordered virgin InP directly produces a track that is large enough to be stable.},
doi = {10.1103/PHYSREVB.73.1},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 18,
volume = 73,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}