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Title: Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

Abstract

Well-crystallized Ni-Zn ferrite (Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4}) highly oriented ultrathin films were obtained at a substrate temperature of 200 deg. C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. Faculty of Engineering, Yamaguchi University, Ube 755-8611 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20788145
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 8; Other Information: DOI: 10.1063/1.2169538; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; ELECTRON CYCLOTRON-RESONANCE; FABRICATION; FERRITE; HEAT TREATMENTS; LATTICE PARAMETERS; MAGNESIUM OXIDES; MICROWAVE RADIATION; NICKEL COMPOUNDS; NITRIDES; PLASMA; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC COMPOUNDS

Citation Formats

Tanaka, Terumitsu, Kurisu, Hiroki, Matsuura, Mitsuru, Shimosato, Yoshihiro, Okada, Shigenobu, Oshiro, Kazunori, Fujimori, Hirotaka, Yamamoto, Setsuo, Shimadzu Corporation, Hadano 259-1304, and Graduate School of Medicine, Yamaguchi University, Ube 755-8611. Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method. United States: N. p., 2006. Web. doi:10.1063/1.2169538.
Tanaka, Terumitsu, Kurisu, Hiroki, Matsuura, Mitsuru, Shimosato, Yoshihiro, Okada, Shigenobu, Oshiro, Kazunori, Fujimori, Hirotaka, Yamamoto, Setsuo, Shimadzu Corporation, Hadano 259-1304, & Graduate School of Medicine, Yamaguchi University, Ube 755-8611. Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method. United States. doi:10.1063/1.2169538.
Tanaka, Terumitsu, Kurisu, Hiroki, Matsuura, Mitsuru, Shimosato, Yoshihiro, Okada, Shigenobu, Oshiro, Kazunori, Fujimori, Hirotaka, Yamamoto, Setsuo, Shimadzu Corporation, Hadano 259-1304, and Graduate School of Medicine, Yamaguchi University, Ube 755-8611. Sat . "Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method". United States. doi:10.1063/1.2169538.
@article{osti_20788145,
title = {Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method},
author = {Tanaka, Terumitsu and Kurisu, Hiroki and Matsuura, Mitsuru and Shimosato, Yoshihiro and Okada, Shigenobu and Oshiro, Kazunori and Fujimori, Hirotaka and Yamamoto, Setsuo and Shimadzu Corporation, Hadano 259-1304 and Graduate School of Medicine, Yamaguchi University, Ube 755-8611},
abstractNote = {Well-crystallized Ni-Zn ferrite (Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4}) highly oriented ultrathin films were obtained at a substrate temperature of 200 deg. C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.},
doi = {10.1063/1.2169538},
journal = {Journal of Applied Physics},
number = 8,
volume = 99,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}
  • We report a study of the magnetic domain structure of nanocrystalline thin films of nickel-zinc ferrite. The ferrite films were synthesized using aqueous spin-spray coating at low temperature (∼90 °C) and showed high complex permeability in the GHz range. Electron microscopy and microanalysis revealed that the films consisted of columnar grains with uniform chemical composition. Off-axis electron holography combined with magnetic force microscopy indicated a multi-grain domain structure with in-plane magnetization. The correlation between the magnetic domain morphology and crystal structure is briefly discussed.
  • No abstract prepared.
  • Bi(-Pb)-Sr-Ca-Cu-O thin films were prepared on MgO(100) single-crystal substrates by electron cyclotron resonance (ECR) plasma sputtering at substrate temperatures from room temperature to 590 /degree/C. Pb-doped superconducting as-grown films were obtained above 560 /degree/C. The /ital T//sub /ital c// values of the Pb-doped films prepared at 570--590 /degree/C were 58--64 K which increased with increasing substrate temperature. Pb-undoped as-grown films obtained at 590 /degree/C showed superconduction (/ital T//sub /ital c// =30 K), but the films obtained below 580 /degree/C were semiconductors. The grain sizes and contents of the 37 A phase (110 K phase) were increased by the Pb dopingmore » into the as-grown Bi-Sr-Ca-Cu-O films.« less
  • Cu(In,Ga)S{sub 2} (CIGS) films were deposited on Mo coated soda lime glass substrates using an electron cyclotron resonance plasma enhanced one-step reactive magnetron co-sputtering process (ECR-RMS). The crystalline quality and the morphology of the Cu(In,Ga)S{sub 2} films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray fluorescence. We also compared these CIGS films with films previously prepared without ECR assistance and find that the crystallinity of the CIGS films is correlated with the roughness evolution during deposition. Atomic force microscopy was used to measure the surface topography and to derive one-dimensional power spectral densities (1DPSD). Allmore » 1DPSD spectra of CIGS films exhibit no characteristic peak which is typical for the scaling of a self-affine surface. The growth exponent β, characterizing the roughness R{sub q} evolution during the film growth as R{sub q} ∼ d{sup β}, changes with film thickness. The root-mean-square roughness at low temperatures increases only slightly with a growth exponent β = 0.013 in the initial growth stage, while R{sub q} increases with a much higher exponent β = 0.584 when the film thickness is larger than about 270 nm. Additionally, we found that the H{sub 2}S content of the sputtering atmosphere and the Cu- to-(In + Ga) ratio has a strong influence of the morphology of the CIGS films in this one-step ECR-RMS process.« less
  • The effect of thermal annealing on structural and magnetic properties has been investigated for Zn ferrite films deposited on Si (111) substrates using radio frequency magnetron sputtering. The saturation magnetization at room temperature was enhanced upto 303 emu/cm{sup 3} by annealing at relatively low temperature of 200 deg. C and decreased at higher temperatures. The complex permeability {mu}={mu}{sup '}-i{mu}{sup ''} values of the ferrite films as-deposited and annealed at 200 and 400 deg. C were measured at frequency upto 5 GHz. These films exhibited better high-frequency properties, especially, the film annealed at 200 deg. C had a large {mu}{sup '}more » of 19.5 and high resonance frequency f{sub r} of 1.61 GHz. And the reason was investigated preliminarily based on the bianisotropy model.« less