Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

Journal Article · Sat Apr 15 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2169538· OSTI ID:20788145

Tanaka, Terumitsu; Kurisu, Hiroki; Matsuura, Mitsuru; Shimosato, Yoshihiro; Okada, Shigenobu; Oshiro, Kazunori; Fujimori, Hirotaka; Yamamoto, Setsuo ^[1]

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1. Faculty of Engineering, Yamaguchi University, Ube 755-8611 (Japan)

Well-crystallized Ni-Zn ferrite (Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4}) highly oriented ultrathin films were obtained at a substrate temperature of 200 deg. C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

• OSTI ID: 20788145
• Journal Information: Journal of Applied Physics, Vol. 99, Issue 8; Other Information: DOI: 10.1063/1.2169538; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
ELECTRON CYCLOTRON-RESONANCE
FABRICATION
FERRITE
HEAT TREATMENTS
LATTICE PARAMETERS
MAGNESIUM OXIDES
MICROWAVE RADIATION
NICKEL COMPOUNDS
NITRIDES
PLASMA
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ZINC COMPOUNDS