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Title: Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

Abstract

Well-crystallized Ni-Zn ferrite (Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4}) highly oriented ultrathin films were obtained at a substrate temperature of 200 deg. C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. Faculty of Engineering, Yamaguchi University, Ube 755-8611 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20788145
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 8; Other Information: DOI: 10.1063/1.2169538; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; ELECTRON CYCLOTRON-RESONANCE; FABRICATION; FERRITE; HEAT TREATMENTS; LATTICE PARAMETERS; MAGNESIUM OXIDES; MICROWAVE RADIATION; NICKEL COMPOUNDS; NITRIDES; PLASMA; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC COMPOUNDS

Citation Formats

Tanaka, Terumitsu, Kurisu, Hiroki, Matsuura, Mitsuru, Shimosato, Yoshihiro, Okada, Shigenobu, Oshiro, Kazunori, Fujimori, Hirotaka, Yamamoto, Setsuo, Shimadzu Corporation, Hadano 259-1304, and Graduate School of Medicine, Yamaguchi University, Ube 755-8611. Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method. United States: N. p., 2006. Web. doi:10.1063/1.2169538.
Tanaka, Terumitsu, Kurisu, Hiroki, Matsuura, Mitsuru, Shimosato, Yoshihiro, Okada, Shigenobu, Oshiro, Kazunori, Fujimori, Hirotaka, Yamamoto, Setsuo, Shimadzu Corporation, Hadano 259-1304, & Graduate School of Medicine, Yamaguchi University, Ube 755-8611. Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method. United States. doi:10.1063/1.2169538.
Tanaka, Terumitsu, Kurisu, Hiroki, Matsuura, Mitsuru, Shimosato, Yoshihiro, Okada, Shigenobu, Oshiro, Kazunori, Fujimori, Hirotaka, Yamamoto, Setsuo, Shimadzu Corporation, Hadano 259-1304, and Graduate School of Medicine, Yamaguchi University, Ube 755-8611. 2006. "Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method". United States. doi:10.1063/1.2169538.
@article{osti_20788145,
title = {Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method},
author = {Tanaka, Terumitsu and Kurisu, Hiroki and Matsuura, Mitsuru and Shimosato, Yoshihiro and Okada, Shigenobu and Oshiro, Kazunori and Fujimori, Hirotaka and Yamamoto, Setsuo and Shimadzu Corporation, Hadano 259-1304 and Graduate School of Medicine, Yamaguchi University, Ube 755-8611},
abstractNote = {Well-crystallized Ni-Zn ferrite (Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4}) highly oriented ultrathin films were obtained at a substrate temperature of 200 deg. C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.},
doi = {10.1063/1.2169538},
journal = {Journal of Applied Physics},
number = 8,
volume = 99,
place = {United States},
year = 2006,
month = 4
}
  • No abstract prepared.
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