Structural and magnetic properties of epitaxially grown full-Heusler alloy Co{sub 2}MnGe thin films deposited using magnetron sputtering

Journal Article · Sat Apr 15 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2170980· OSTI ID:20788136

Ishikawa, Takayuki; Marukame, Takao; Matsuda, Ken-ichi; Uemura, Tetsuya; Arita, Masashi; Yamamoto, Masafumi ^[1]

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1. Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814 (Japan)

Full-Heusler alloy Co{sub 2}MnGe thin films were epitaxially grown on MgO (001) substrates using magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at temperatures ranging from 400 to 600 deg. C. X-ray pole figure measurements for the annealed films showed (111) peaks with fourfold symmetry, which gives direct evidence that these films are epitaxial and crystallized in the L2{sub 1} structure. Furthermore, cross-sectional transmission electron microscope images of a fabricated film indicated that it is single crystalline. The annealed films had sufficiently flat surface morphologies with roughnesses of about 0.26 nm rms at film thicknesses of 45 nm. The saturation magnetization of the annealed films was 4.49 {mu}{sub B}/f.u. at 10 K, corresponding to about 90% of the Slater-Pauling value for Co{sub 2}MnGe.

• OSTI ID: 20788136
• Journal Information: Journal of Applied Physics, Vol. 99, Issue 8; Other Information: DOI: 10.1063/1.2170980; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COBALT ALLOYS
CRYSTAL STRUCTURE
CRYSTALLIZATION
GERMANIUM ALLOYS
HEUSLER ALLOYS
MAGNESIUM ALLOYS
MAGNESIUM OXIDES
MAGNETIC PROPERTIES
MAGNETIZATION
MONOCRYSTALS
MORPHOLOGY
SPACE GROUPS
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY