skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Compositional dependencies of ferromagnetic Ge{sub 1-x}Mn{sub x}Te grown by solid-source molecular-beam epitaxy

Abstract

The IV-VI diluted magnetic semiconductor Ge{sub 1-x}Mn{sub x}Te thin films on BaF{sub 2} (111) substrate have been prepared using solid-source molecular-beam epitaxy technique by varying the Mn concentrations from x=0.25 to 0.98. The chemical Mn concentration was determined by x-ray photoelectron spectroscopy measurement. The in situ reflection high-energy electron diffraction pattern indicates that the growth mechanism is in the island-growth mode. The x-ray diffraction shows that the Ge{sub 1-x}Mn{sub x}Te films crystallize in the NaCl phase with (111) orientation. A clear ferromagnetic ordering is observed in the detailed temperature-dependent magnetization measurement for 0.25<x<0.98. The dependence of Curie temperature T{sub C} on Mn concentration x tends to follow a quadratic behavior. This phenomenon can be attributed to the increase of antiferromagnetic interaction since MnTe is an antiferromagnet.

Authors:
; ; ;  [1]
  1. Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)
Publication Date:
OSTI Identifier:
20788116
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 8; Other Information: DOI: 10.1063/1.2170072; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; BARIUM FLUORIDES; CRYSTAL GROWTH; CURIE POINT; ELECTRON DIFFRACTION; FERROMAGNETIC MATERIALS; GERMANIUM COMPOUNDS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MANGANESE TELLURIDES; MOLECULAR BEAM EPITAXY; SODIUM CHLORIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Chen, W. Q., Teo, K. L., Jalil, M. B. A., and Liew, T. Compositional dependencies of ferromagnetic Ge{sub 1-x}Mn{sub x}Te grown by solid-source molecular-beam epitaxy. United States: N. p., 2006. Web. doi:10.1063/1.2170072.
Chen, W. Q., Teo, K. L., Jalil, M. B. A., & Liew, T. Compositional dependencies of ferromagnetic Ge{sub 1-x}Mn{sub x}Te grown by solid-source molecular-beam epitaxy. United States. doi:10.1063/1.2170072.
Chen, W. Q., Teo, K. L., Jalil, M. B. A., and Liew, T. Sat . "Compositional dependencies of ferromagnetic Ge{sub 1-x}Mn{sub x}Te grown by solid-source molecular-beam epitaxy". United States. doi:10.1063/1.2170072.
@article{osti_20788116,
title = {Compositional dependencies of ferromagnetic Ge{sub 1-x}Mn{sub x}Te grown by solid-source molecular-beam epitaxy},
author = {Chen, W. Q. and Teo, K. L. and Jalil, M. B. A. and Liew, T.},
abstractNote = {The IV-VI diluted magnetic semiconductor Ge{sub 1-x}Mn{sub x}Te thin films on BaF{sub 2} (111) substrate have been prepared using solid-source molecular-beam epitaxy technique by varying the Mn concentrations from x=0.25 to 0.98. The chemical Mn concentration was determined by x-ray photoelectron spectroscopy measurement. The in situ reflection high-energy electron diffraction pattern indicates that the growth mechanism is in the island-growth mode. The x-ray diffraction shows that the Ge{sub 1-x}Mn{sub x}Te films crystallize in the NaCl phase with (111) orientation. A clear ferromagnetic ordering is observed in the detailed temperature-dependent magnetization measurement for 0.25<x<0.98. The dependence of Curie temperature T{sub C} on Mn concentration x tends to follow a quadratic behavior. This phenomenon can be attributed to the increase of antiferromagnetic interaction since MnTe is an antiferromagnet.},
doi = {10.1063/1.2170072},
journal = {Journal of Applied Physics},
number = 8,
volume = 99,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}