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Title: Engineering of spin filtering in double epitaxial tunnel junctions

Abstract

Double-barrier fully epitaxial crystalline magnetic tunnel junctions employing a class of artificial antiferromagnetic (AAF) subsystem are elaborated by molecular-beam epitaxy. Our specific AAF subsystem is constituted by an Fe(10 nm)/MgO(0.7 nm)/Fe(20 nm) trilayer stack where the antiferromagnetic coupling between the two Fe layers occurs by spin-polarized tunneling of electrons across the three, atomic-layer thin MgO insulating barrier. In our junctions, the efficiency of spin filtering is validated by the tunnel magnetoresistance effects of about 140% at room temperature and a high output voltage up to 500 mV at 1.3 V.

Authors:
; ; ; ; ; ; ;  [1]
  1. Laboratoire de Physique des Materiaux, UMR CNRS 7556, B.P. 239, 54506 Vandoeuvre les Nancy Cedex (France)
Publication Date:
OSTI Identifier:
20788099
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 8; Other Information: DOI: 10.1063/1.2166592; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRONS; IRON; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SPIN; SPIN ORIENTATION; SUPERCONDUCTING JUNCTIONS; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT

Citation Formats

Tiusan, C., Greullet, F., Sicot, M., Hehn, M., Bellouard, C., Montaigne, F., Andrieu, S., and Schuhl, A.. Engineering of spin filtering in double epitaxial tunnel junctions. United States: N. p., 2006. Web. doi:10.1063/1.2166592.
Tiusan, C., Greullet, F., Sicot, M., Hehn, M., Bellouard, C., Montaigne, F., Andrieu, S., & Schuhl, A.. Engineering of spin filtering in double epitaxial tunnel junctions. United States. doi:10.1063/1.2166592.
Tiusan, C., Greullet, F., Sicot, M., Hehn, M., Bellouard, C., Montaigne, F., Andrieu, S., and Schuhl, A.. Sat . "Engineering of spin filtering in double epitaxial tunnel junctions". United States. doi:10.1063/1.2166592.
@article{osti_20788099,
title = {Engineering of spin filtering in double epitaxial tunnel junctions},
author = {Tiusan, C. and Greullet, F. and Sicot, M. and Hehn, M. and Bellouard, C. and Montaigne, F. and Andrieu, S. and Schuhl, A.},
abstractNote = {Double-barrier fully epitaxial crystalline magnetic tunnel junctions employing a class of artificial antiferromagnetic (AAF) subsystem are elaborated by molecular-beam epitaxy. Our specific AAF subsystem is constituted by an Fe(10 nm)/MgO(0.7 nm)/Fe(20 nm) trilayer stack where the antiferromagnetic coupling between the two Fe layers occurs by spin-polarized tunneling of electrons across the three, atomic-layer thin MgO insulating barrier. In our junctions, the efficiency of spin filtering is validated by the tunnel magnetoresistance effects of about 140% at room temperature and a high output voltage up to 500 mV at 1.3 V.},
doi = {10.1063/1.2166592},
journal = {Journal of Applied Physics},
number = 8,
volume = 99,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}