Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors

Journal Article · Sat Apr 15 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2189936· OSTI ID:20788090

Devine, R A. B. ^[1]

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1. AFRL-VSSE, Space Vehicles Directorate, 3550 Aberdeen Avenue, Kirtland AFB, New Mexico 87117 (United States)

Preliminary measurements of positive and negative bias stress and radiation effects in poly-three-hexylthiophene based field effect transistors are reported. Radiation up to 0.5 Mrad (SiO{sub 2}) is found to have little effect on channel carrier mobility though bias stressing does. A strong positive bias stress induced positive threshold voltage shift is suppressed when devices are simultaneously irradiated. There is no evidence for significant radiation effects in the organic semiconductor. Recovery effects are observed following removal of bias stress and radiation.

• OSTI ID: 20788090
• Journal Information: Journal of Applied Physics, Vol. 99, Issue 8; Other Information: DOI: 10.1063/1.2189936; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER MOBILITY
ELECTRIC POTENTIAL
FIELD EFFECT TRANSISTORS
IRRADIATION
ORGANIC SEMICONDUCTORS
PHYSICAL RADIATION EFFECTS
SILICON OXIDES
STRESSES