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Title: Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors

Abstract

Preliminary measurements of positive and negative bias stress and radiation effects in poly-three-hexylthiophene based field effect transistors are reported. Radiation up to 0.5 Mrad (SiO{sub 2}) is found to have little effect on channel carrier mobility though bias stressing does. A strong positive bias stress induced positive threshold voltage shift is suppressed when devices are simultaneously irradiated. There is no evidence for significant radiation effects in the organic semiconductor. Recovery effects are observed following removal of bias stress and radiation.

Authors:
 [1]
+ Show Author Affiliations
  1. AFRL-VSSE, Space Vehicles Directorate, 3550 Aberdeen Avenue, Kirtland AFB, New Mexico 87117 (United States)
Publication Date:
OSTI Identifier:
20788090
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 8; Other Information: DOI: 10.1063/1.2189936; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER MOBILITY; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; IRRADIATION; ORGANIC SEMICONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON OXIDES; STRESSES

Citation Formats

Devine, R. A. B. Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors. United States: N. p., 2006. Web. doi:10.1063/1.2189936.
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Devine, R. A. B. Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors. United States. doi:10.1063/1.2189936.
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Devine, R. A. B. Sat . "Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors". United States. doi:10.1063/1.2189936.
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@article{osti_20788090,
title = {Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors},
author = {Devine, R. A. B.},
abstractNote = {Preliminary measurements of positive and negative bias stress and radiation effects in poly-three-hexylthiophene based field effect transistors are reported. Radiation up to 0.5 Mrad (SiO{sub 2}) is found to have little effect on channel carrier mobility though bias stressing does. A strong positive bias stress induced positive threshold voltage shift is suppressed when devices are simultaneously irradiated. There is no evidence for significant radiation effects in the organic semiconductor. Recovery effects are observed following removal of bias stress and radiation.},
doi = {10.1063/1.2189936},
journal = {Journal of Applied Physics},
number = 8,
volume = 99,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}
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Journal Article:
DOI:  10.1063/1.2189936
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