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Title: Theory of the screened Coulomb field generated by impurity ions in semiconductors

Abstract

This theory examines the effect of the screened Coulomb field generated by impurity ions on various semiconductor phenomena. The exact equation for the screening length, which is derived for semiconductors, is a function of temperature, doping density and intrinsic carrier density. In silicon the screening length varies from a fraction of a nanometer to thousands of nanometers depending on the temperature and the doping density. The overlap of these impurity fields causes both crystal potential shift and repulsion among impurity ions. The repulsion among the impurity ions gives rise to a pressure build-up, which is attributed to such phenomena as solid solubility and diffusion-induced defect generation. The experimental solubilities of lithium in germanium, and boron, phosphorus, and arsenic in silicon are compared with the theoretical values. Also, the optically enhanced solubility during rapid thermal processing is explained.

Authors:
 [1]
  1. California State University, Fullerton, California 92834 (United States)
Publication Date:
OSTI Identifier:
20788081
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 73; Journal Issue: 16; Other Information: DOI: 10.1103/PhysRevB.73.165210; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC; BORON; CARRIER DENSITY; COULOMB FIELD; CRYSTAL DEFECTS; CRYSTALS; DIFFUSION; GERMANIUM; IMPURITIES; IONS; LITHIUM; PHOSPHORUS; POTENTIALS; SEMICONDUCTOR MATERIALS; SILICON; SOLIDS; SOLUBILITY; TEMPERATURE DEPENDENCE

Citation Formats

Kwon, Young D. Theory of the screened Coulomb field generated by impurity ions in semiconductors. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.73.1.
Kwon, Young D. Theory of the screened Coulomb field generated by impurity ions in semiconductors. United States. https://doi.org/10.1103/PHYSREVB.73.1
Kwon, Young D. 2006. "Theory of the screened Coulomb field generated by impurity ions in semiconductors". United States. https://doi.org/10.1103/PHYSREVB.73.1.
@article{osti_20788081,
title = {Theory of the screened Coulomb field generated by impurity ions in semiconductors},
author = {Kwon, Young D},
abstractNote = {This theory examines the effect of the screened Coulomb field generated by impurity ions on various semiconductor phenomena. The exact equation for the screening length, which is derived for semiconductors, is a function of temperature, doping density and intrinsic carrier density. In silicon the screening length varies from a fraction of a nanometer to thousands of nanometers depending on the temperature and the doping density. The overlap of these impurity fields causes both crystal potential shift and repulsion among impurity ions. The repulsion among the impurity ions gives rise to a pressure build-up, which is attributed to such phenomena as solid solubility and diffusion-induced defect generation. The experimental solubilities of lithium in germanium, and boron, phosphorus, and arsenic in silicon are compared with the theoretical values. Also, the optically enhanced solubility during rapid thermal processing is explained.},
doi = {10.1103/PHYSREVB.73.1},
url = {https://www.osti.gov/biblio/20788081}, journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 16,
volume = 73,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}