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Title: Vacancy-impurity pairs in relaxed Si{sub 1-x}Ge{sub x} layers studied by positron annihilation spectroscopy

Abstract

Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si{sub 1-x}Ge{sub x} layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2 MeV proton irradiation with a 1.6x10{sup 15} cm{sup -2} fluence was used to produce saturated positron trapping in monovacancy related defects in the n-type layers. The defects were identified as V-P pairs, the E center. The distribution of Si and Ge atoms surrounding the E center was the same as in the host lattice. The process leading to the formation of V-P pairs therefore does not seem to have a significant preference for either Si or Ge atoms. In undoped Si{sub 1-x}Ge{sub x} we find that a similar irradiation produces a low concentration of divacancies or larger vacancy defects and found no evidence of monovacancies surrounded by several Ge atoms.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. Laboratory of Physics, Helsinki University of Technology, P.O.Box 1100 FIN-02015 HUT (Finland)
  2. (Sweden)
  3. (Norway)
Publication Date:
OSTI Identifier:
20788080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 73; Journal Issue: 16; Other Information: DOI: 10.1103/PhysRevB.73.165209; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNIHILATION; ATOMS; CRYSTALS; DOPED MATERIALS; E CENTERS; GERMANIUM ALLOYS; GERMANIUM SILICIDES; IMPURITIES; IRRADIATION; LAYERS; MEV RANGE; PHOSPHORUS; PHYSICAL RADIATION EFFECTS; POSITRONS; PROTONS; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; SPECTROSCOPY; THIN FILMS; TRAPPING

Citation Formats

Rummukainen, M., Slotte, J., Saarinen, K., Radamson, H. H., Haallstedt, J., Kuznetsov, A. Yu., School of Information and Communication Technology, Kungliga Tekniska Hoegskolan, Isafjordsgatan 22 V 26, Electrum 229, 16440 Kista, and Department of Physics, Oslo University, Physical Electronics, P.B. 1048, Blindern N-0316 Oslo. Vacancy-impurity pairs in relaxed Si{sub 1-x}Ge{sub x} layers studied by positron annihilation spectroscopy. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.73.1.
Rummukainen, M., Slotte, J., Saarinen, K., Radamson, H. H., Haallstedt, J., Kuznetsov, A. Yu., School of Information and Communication Technology, Kungliga Tekniska Hoegskolan, Isafjordsgatan 22 V 26, Electrum 229, 16440 Kista, & Department of Physics, Oslo University, Physical Electronics, P.B. 1048, Blindern N-0316 Oslo. Vacancy-impurity pairs in relaxed Si{sub 1-x}Ge{sub x} layers studied by positron annihilation spectroscopy. United States. doi:10.1103/PHYSREVB.73.1.
Rummukainen, M., Slotte, J., Saarinen, K., Radamson, H. H., Haallstedt, J., Kuznetsov, A. Yu., School of Information and Communication Technology, Kungliga Tekniska Hoegskolan, Isafjordsgatan 22 V 26, Electrum 229, 16440 Kista, and Department of Physics, Oslo University, Physical Electronics, P.B. 1048, Blindern N-0316 Oslo. Sat . "Vacancy-impurity pairs in relaxed Si{sub 1-x}Ge{sub x} layers studied by positron annihilation spectroscopy". United States. doi:10.1103/PHYSREVB.73.1.
@article{osti_20788080,
title = {Vacancy-impurity pairs in relaxed Si{sub 1-x}Ge{sub x} layers studied by positron annihilation spectroscopy},
author = {Rummukainen, M. and Slotte, J. and Saarinen, K. and Radamson, H. H. and Haallstedt, J. and Kuznetsov, A. Yu. and School of Information and Communication Technology, Kungliga Tekniska Hoegskolan, Isafjordsgatan 22 V 26, Electrum 229, 16440 Kista and Department of Physics, Oslo University, Physical Electronics, P.B. 1048, Blindern N-0316 Oslo},
abstractNote = {Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si{sub 1-x}Ge{sub x} layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2 MeV proton irradiation with a 1.6x10{sup 15} cm{sup -2} fluence was used to produce saturated positron trapping in monovacancy related defects in the n-type layers. The defects were identified as V-P pairs, the E center. The distribution of Si and Ge atoms surrounding the E center was the same as in the host lattice. The process leading to the formation of V-P pairs therefore does not seem to have a significant preference for either Si or Ge atoms. In undoped Si{sub 1-x}Ge{sub x} we find that a similar irradiation produces a low concentration of divacancies or larger vacancy defects and found no evidence of monovacancies surrounded by several Ge atoms.},
doi = {10.1103/PHYSREVB.73.1},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 16,
volume = 73,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}